Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional research. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here, we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 104 A W−1), specific detectivity (2.5 1014 Jones), and external quantum efficiency (1.8 107%) when Vds = 3 V, = 515 nm, and P = 0.01 mW cm−2. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.
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16 May 2022
Research Article|
May 16 2022
Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
Special Collection:
One-Dimensional van der Waals Materials
H. J. Hu;
H. J. Hu
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
2
University of Science and Technology of China
, Hefei 230026, China
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W. L. Zhen;
W. L. Zhen
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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S. R. Weng;
S. R. Weng
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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Y. D. Li;
Y. D. Li
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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R. Niu;
R. Niu
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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Z. L. Yue;
Z. L. Yue
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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F. Xu;
F. Xu
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
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L. Pi;
L. Pi
a)
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
2
University of Science and Technology of China
, Hefei 230026, China
a)Authors to whom correspondence should be addressed: pili@ustc.edu.cn; zhangcj@hmfl.ac.cn; and wkzhu@hmfl.ac.cn
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C. J. Zhang
;
C. J. Zhang
a)
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
3
Institutes of Physical Science and Information Technology, Anhui University
, Hefei 230601, China
a)Authors to whom correspondence should be addressed: pili@ustc.edu.cn; zhangcj@hmfl.ac.cn; and wkzhu@hmfl.ac.cn
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W. K. Zhu
W. K. Zhu
a)
1
High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, China
a)Authors to whom correspondence should be addressed: pili@ustc.edu.cn; zhangcj@hmfl.ac.cn; and wkzhu@hmfl.ac.cn
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a)Authors to whom correspondence should be addressed: pili@ustc.edu.cn; zhangcj@hmfl.ac.cn; and wkzhu@hmfl.ac.cn
Note: This paper is part of the APL Special Collection on One-Dimensional van der Waals Materials.
Appl. Phys. Lett. 120, 201101 (2022)
Article history
Received:
November 30 2021
Accepted:
May 04 2022
Citation
H. J. Hu, W. L. Zhen, S. R. Weng, Y. D. Li, R. Niu, Z. L. Yue, F. Xu, L. Pi, C. J. Zhang, W. K. Zhu; Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires. Appl. Phys. Lett. 16 May 2022; 120 (20): 201101. https://doi.org/10.1063/5.0080334
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