Practical device applications of magnetic multilayers with perpendicular magnetic anisotropy (PMA) usually need to match the mature complementary metal-oxide-semiconductor (CMOS) integrated techniques, which require high temperature annealing during the back-end-of-line process. Here, we report the realization of PMA in the W buffered CoFeB/MgO stack by inserting a thin Zr dusting layer between CoFeB and MgO layers. An ultra-high thermal stability of PMA in the W/CoFeB/Zr/MgO stack is observed, which is robust upon annealing at 600 °C. The establishment of PMA in W/CoFeB/Zr/MgO is due to the formation of an interface layer between CoFeB and MgO doped with oxidized Zr. After annealing at 540 °C, the magnetic interfacial anisotropy density reaches 3.08 erg/cm2, which is much higher than those in previous reports. The results suggest that the W/CoFeB/Zr/MgO stack with extra high annealing stability is a potential candidate to achieving the practical application of spin-logic device that is compatible with the mature CMOS integrated techniques.
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10 January 2022
Research Article|
January 10 2022
Ultra-high thermal stability of perpendicular magnetic anisotropy in the W buffered CoFeB/MgO stacks with Zr dusting layers
Q. X. Guo
;
Q. X. Guo
1
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences
, Beijing 100190, China
2
Department of Materials Physics and Chemistry, University of Science and Technology
Beijing, Beijing 100083, China
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K. Wang;
K. Wang
1
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences
, Beijing 100190, China
2
Department of Materials Physics and Chemistry, University of Science and Technology
Beijing, Beijing 100083, China
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H. Bai;
H. Bai
3
Spallation Neutron Source Science Center
, Dongguan 523803, China
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Z. C. Zheng;
Z. C. Zheng
2
Department of Materials Physics and Chemistry, University of Science and Technology
Beijing, Beijing 100083, China
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L. H. Wang;
L. H. Wang
4
Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology
, Beijing 100124, China
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X. M. Wang;
X. M. Wang
5
Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology
Beijing, Beijing 100083, China
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W. He;
W. He
1
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences
, Beijing 100190, China
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G. H. Yu;
G. H. Yu
2
Department of Materials Physics and Chemistry, University of Science and Technology
Beijing, Beijing 100083, China
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J. Teng
;
J. Teng
a)
2
Department of Materials Physics and Chemistry, University of Science and Technology
Beijing, Beijing 100083, China
a)Authors to whom correspondence should be addressed: tengjiao@mater.ustb.edu.cn and tzhu@iphy.ac.cn
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T. Zhu
T. Zhu
a)
1
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
Spallation Neutron Source Science Center
, Dongguan 523803, China
6
Songshan Lake Materials Laboratory
, Dongguan 523808, China
a)Authors to whom correspondence should be addressed: tengjiao@mater.ustb.edu.cn and tzhu@iphy.ac.cn
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a)Authors to whom correspondence should be addressed: tengjiao@mater.ustb.edu.cn and tzhu@iphy.ac.cn
Appl. Phys. Lett. 120, 022402 (2022)
Article history
Received:
September 25 2021
Accepted:
December 23 2021
Citation
Q. X. Guo, K. Wang, H. Bai, Z. C. Zheng, L. H. Wang, X. M. Wang, W. He, G. H. Yu, J. Teng, T. Zhu; Ultra-high thermal stability of perpendicular magnetic anisotropy in the W buffered CoFeB/MgO stacks with Zr dusting layers. Appl. Phys. Lett. 10 January 2022; 120 (2): 022402. https://doi.org/10.1063/5.0072848
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