With rich electrical and magnetic properties and environmental stability, layered MSi2N4 (M = transition metal) has recently attracted much attention. By using a ferromagnetic VSi2N4 monolayer as an electrode and a semiconducting MoSi2N4 monolayer as a tunneling barrier, an atomically thin VSi2N4/MoSi2N4/VSi2N4 magnetic tunnel junction (MTJ) is theoretically proposed. Our calculated results suggest that the MTJ has a giant tunneling magnetoresistance (TMR) as large as 1010% and a near perfect (100%) spin injection efficiency (SIE). Our nonequilibrium Green's functions calculations indicate that the TMR and SIE are robust under a finite bias voltage of −100 mV to 100 mV. These results show that layered MSi2N4 can be promising materials for designing atomically thin MTJ with a giant TMR for future spintronic applications.
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10 January 2022
Research Article|
January 10 2022
Giant tunneling magnetoresistance in atomically thin VSi2N4/MoSi2N4/VSi2N4 magnetic tunnel junction
Qingyun Wu
;
Qingyun Wu
a)
Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore
487372 a)Authors to whom correspondence should be addressed: qingyun_wu@sutd.edu.sg and ricky_ang@sutd.edu.sg
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Lay Kee Ang
Lay Kee Ang
a)
Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore
487372 a)Authors to whom correspondence should be addressed: qingyun_wu@sutd.edu.sg and ricky_ang@sutd.edu.sg
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: qingyun_wu@sutd.edu.sg and ricky_ang@sutd.edu.sg
Appl. Phys. Lett. 120, 022401 (2022)
Article history
Received:
October 13 2021
Accepted:
December 28 2021
Citation
Qingyun Wu, Lay Kee Ang; Giant tunneling magnetoresistance in atomically thin VSi2N4/MoSi2N4/VSi2N4 magnetic tunnel junction. Appl. Phys. Lett. 10 January 2022; 120 (2): 022401. https://doi.org/10.1063/5.0075046
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