We perform hysteresis-loop measurement and domain imaging for -oriented D019-Mn3+xSn1-x () thin films using the magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg, comparable with bulk single-crystal Mn3Sn. The composition x dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by the amount of the reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by domain expansion, where the domain wall preferentially propagates along the direction. Our study provides a basic understanding of the spatial evolution of the reversal of the chiral-spin structure in non-collinear antiferromagnetic thin films.
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25 April 2022
Research Article|
April 27 2022
Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect
Tomohiro Uchimura
;
Tomohiro Uchimura
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
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Ju-Young Yoon
;
Ju-Young Yoon
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
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Yuma Sato
;
Yuma Sato
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
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Yutaro Takeuchi
;
Yutaro Takeuchi
3
WPI-Advanced Institute for Materials Research, Tohoku University
, Sendai 980-8577, Japan
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Shun Kanai
;
Shun Kanai
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
4
Division for the Establishment of Frontier Sciences, Organization for Advanced Studies, Tohoku University
, Sendai 980-8577, Japan
5
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
6
PRESTO, Japan Science and Technology Agency
, Kawaguchi 332-0012, Japan
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Ryota Takechi;
Ryota Takechi
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
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Keisuke Kishi;
Keisuke Kishi
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
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Yuta Yamane
;
Yuta Yamane
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
7
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University
, Sendai 980-8578, Japan
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Samik DuttaGupta
;
Samik DuttaGupta
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
5
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
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Jun'ichi Ieda
;
Jun'ichi Ieda
8
Advanced Science Research Center, Japan Atomic Energy Agency
, Tokai, Ibaraki 319-1195, Japan
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Hideo Ohno
;
Hideo Ohno
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
3
WPI-Advanced Institute for Materials Research, Tohoku University
, Sendai 980-8577, Japan
5
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
9
Center for Innovative Integrated Electronic Systems, Tohoku University
, Sendai 980-0845, Japan
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Shunsuke Fukami
Shunsuke Fukami
a)
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Graduate School of Engineering, Tohoku University
, Sendai 980-0845, Japan
3
WPI-Advanced Institute for Materials Research, Tohoku University
, Sendai 980-8577, Japan
5
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
9
Center for Innovative Integrated Electronic Systems, Tohoku University
, Sendai 980-0845, Japan
10
Inamori Research Institute for Science
, Kyoto 600-8411, Japan
a)Author to whom correspondence should be addressed: s-fukami@tohoku.ac.jp
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a)Author to whom correspondence should be addressed: s-fukami@tohoku.ac.jp
Appl. Phys. Lett. 120, 172405 (2022)
Article history
Received:
February 24 2022
Accepted:
April 15 2022
Citation
Tomohiro Uchimura, Ju-Young Yoon, Yuma Sato, Yutaro Takeuchi, Shun Kanai, Ryota Takechi, Keisuke Kishi, Yuta Yamane, Samik DuttaGupta, Jun'ichi Ieda, Hideo Ohno, Shunsuke Fukami; Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect. Appl. Phys. Lett. 25 April 2022; 120 (17): 172405. https://doi.org/10.1063/5.0089355
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