This paper proposes a math-physical correlative method that monitors deep defect response by electrical measurement and calculates the state density by designed mathematical processing. The extracted Gaussian distribution of deep defects was discussed according to the theoretical model for the density of states. The accuracy of this method was also verified through 1/f low frequency noise analysis. The origination of deep defects was investigated by transmission electron microscope, x-ray photoelectron spectroscopy, and photoluminescence analysis, and a molecular model was constructed. Therefore, multiple perspectives of deep defects have been studied by combining electrical measurements, mathematical data processing, and materials analysis, providing inspiration for future comprehensive study on deep defects of the GaN-based device.
The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT
Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
Kuan-Chang Chang, Tianjiao Dai, Zhengda Wang, Zhangwei Huang, Xinnan Lin, Lei Li; The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT. Appl. Phys. Lett. 25 April 2022; 120 (17): 172107. https://doi.org/10.1063/5.0088928
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