Thin-film gallium nitride (GaN) is a promising platform for phononic integrated circuits that hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on a high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor is found when temperature decreases from room temperature (Q = 5000) to (Q = 30 000), and thus, a frequency-quality factor product of is obtained. Higher quality factors should be available when the fabrication process is further optimized. Our system shows great potential in hybrid quantum devices via the so-called circuit quantum acoustodynamics.
High-frequency traveling-wave phononic cavity with sub-micron wavelength
Xin-Biao Xu, Jia-Qi Wang, Yuan-Hao Yang, Weiting Wang, Yan-Lei Zhang, Bao-Zhen Wang, Chun-Hua Dong, Luyan Sun, Guang-Can Guo, Chang-Ling Zou; High-frequency traveling-wave phononic cavity with sub-micron wavelength. Appl. Phys. Lett. 18 April 2022; 120 (16): 163503. https://doi.org/10.1063/5.0086751
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