In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the threshold voltage instability originates from electron trapping at gate dielectric border traps close to the Al2O3/β-Ga2O3 interface. (ii) Logarithmic kinetics were detected for both stress and recovery by means of a innovative fast-capacitance experimental setup, over more than seven decades of time; (iii) a generalized model, which is capable of accurately reproducing the experimental results, was proposed to explain this trend.
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Würfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini; Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling. Appl. Phys. Lett. 18 April 2022; 120 (16): 163502. https://doi.org/10.1063/5.0085068
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