The layered quasi one-dimensional compound TiS3 is remarkable for its optical properties, especially, photoconductivity. Up to now, photoconductivity in TiS3 was studied only at room temperature. Here, we report photoconductivity, δσ, of the TiS3 whiskers in the temperature range of 5–300 K under irradiation in the near-infrared region. With a temperature decrease from room temperature down to T ∼ 100 K, δσ grows moderately, dominated by the variation of the mobility of the electrons. The estimates based on the values of δσ give the recombination time ∼3–25 μs at 300 K. The results show that above ∼100 K, TiS3 behaves as a semiconductor, where electron–hole pairs are excited across the gap, while the recombination goes through transitions of the excited electrons to a donor level with a long lifetime. Below 60 K, a drop of δσ is likely to reveal a phase transition of electrons into a collective state. Another feature in δσ(T) is seen around 17 K, resembling the temperature variation of the conductivity. This feature indicates a drop in the mobility of the electrons. While the behavior of δσ(T) is consistent with the transition of electrons into a collective state, it is strikingly different from δσ(T) of the known quasi one-dimensional conductors with charge-density waves.
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11 April 2022
Research Article|
April 13 2022
Temperature variation of photoconductivity in the layered quasi one-dimensional compound TiS3: Semiconducting and unconventional behavior
Special Collection:
One-Dimensional van der Waals Materials
I. G. Gorlova
;
I. G. Gorlova
1
Kotelnikov Institute of Radioengineering and Electronics of RAS
, 125009 Moscow, Russia
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S. A. Nikonov
;
S. A. Nikonov
1
Kotelnikov Institute of Radioengineering and Electronics of RAS
, 125009 Moscow, Russia
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S. G. Zybtsev;
S. G. Zybtsev
1
Kotelnikov Institute of Radioengineering and Electronics of RAS
, 125009 Moscow, Russia
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V. Ya. Pokrovskii
;
V. Ya. Pokrovskii
a)
1
Kotelnikov Institute of Radioengineering and Electronics of RAS
, 125009 Moscow, Russia
a)Author to whom correspondence should be addressed: [email protected]
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A. N. Titov
A. N. Titov
2
M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
, 620990 Yekaterinburg, Russia
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I. G. Gorlova
1
S. A. Nikonov
1
S. G. Zybtsev
1
V. Ya. Pokrovskii
1,a)
A. N. Titov
2
1
Kotelnikov Institute of Radioengineering and Electronics of RAS
, 125009 Moscow, Russia
2
M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
, 620990 Yekaterinburg, Russia
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the APL Special Collection on One-Dimensional van der Waals Materials.
Appl. Phys. Lett. 120, 153102 (2022)
Article history
Received:
December 17 2021
Accepted:
March 26 2022
Citation
I. G. Gorlova, S. A. Nikonov, S. G. Zybtsev, V. Ya. Pokrovskii, A. N. Titov; Temperature variation of photoconductivity in the layered quasi one-dimensional compound TiS3: Semiconducting and unconventional behavior. Appl. Phys. Lett. 11 April 2022; 120 (15): 153102. https://doi.org/10.1063/5.0082716
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