In transition-metal dipnictides TmPn2 (Tm = Ta and Nb; Pn = P, As, and Sb), the origin of extremely large magnetoresistance (XMR) is yet to be studied by the direct visualization of the experimental band structures. Here, using angle-resolved photoemission spectroscopy, we map out the three-dimensional electronic structure of NbAs2. The open-orbit topology contributes to a non-negligible part of the Fermi surfaces (FSs), like that of the isostructural compound MoAs2, where the open FS is proposed to likely explain the origin of XMR. We further demonstrate the observation of open characters in the overall FSs of W2As3, which is also a XMR semimetal with the same space group of C12/m1 as the TmPn2 family and MoAs2. Our results suggest that the open-orbit FS topology may be a shared feature between XMR materials with the space group of C12/m1 and, thus, could possibly play a role in determining the corresponding XMR effect together with the electron–hole compensation.
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Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs2 and W2As3 with extremely large magnetoresistance
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21 March 2022
Research Article|
March 22 2022
Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs2 and W2As3 with extremely large magnetoresistance
Rui Lou
;
Rui Lou
a)
1
School of Physical Science and Technology, Lanzhou University
, Lanzhou 730000, China
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
3
State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University
, Shanghai 200438, China
4
Leibniz Institute for Solid State and Materials Research, IFW Dresden
, 01069 Dresden, Germany
a)Authors to whom correspondence should be addressed: lourui@lzu.edu.cn; tlxia@ruc.edu.cn; and scw@ruc.edu.cn
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Yiyan Wang;
Yiyan Wang
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
5
Institute of Physical Science and Information Technology, Anhui University
, Hefei 230601, China
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Lingxiao Zhao;
Lingxiao Zhao
6
Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology
, Wuhan 430074, China
7
School of Physics, Huazhong University of Science and Technology
, Wuhan 430074, China
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Chenchao Xu
;
Chenchao Xu
8
Department of Physics, Zhejiang University
, Hangzhou 310027, China
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Man Li;
Man Li
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
9
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences
, Shanghai 201204, China
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Xiaoyang Chen;
Xiaoyang Chen
3
State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University
, Shanghai 200438, China
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Anmin Zhang;
Anmin Zhang
1
School of Physical Science and Technology, Lanzhou University
, Lanzhou 730000, China
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
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Yaobo Huang
;
Yaobo Huang
9
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences
, Shanghai 201204, China
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Chao Cao;
Chao Cao
8
Department of Physics, Zhejiang University
, Hangzhou 310027, China
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Genfu Chen;
Genfu Chen
10
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
11
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Tianlong Xia;
Tianlong Xia
a)
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
a)Authors to whom correspondence should be addressed: lourui@lzu.edu.cn; tlxia@ruc.edu.cn; and scw@ruc.edu.cn
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Qingming Zhang;
Qingming Zhang
1
School of Physical Science and Technology, Lanzhou University
, Lanzhou 730000, China
10
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Hong Ding;
Hong Ding
10
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
11
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
12
CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences
, Beijing 100049, China
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Shancai Wang
Shancai Wang
a)
2
Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China
, Beijing 100872, China
a)Authors to whom correspondence should be addressed: lourui@lzu.edu.cn; tlxia@ruc.edu.cn; and scw@ruc.edu.cn
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a)Authors to whom correspondence should be addressed: lourui@lzu.edu.cn; tlxia@ruc.edu.cn; and scw@ruc.edu.cn
Appl. Phys. Lett. 120, 123101 (2022)
Article history
Received:
February 01 2022
Accepted:
March 14 2022
Citation
Rui Lou, Yiyan Wang, Lingxiao Zhao, Chenchao Xu, Man Li, Xiaoyang Chen, Anmin Zhang, Yaobo Huang, Chao Cao, Genfu Chen, Tianlong Xia, Qingming Zhang, Hong Ding, Shancai Wang; Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs2 and W2As3 with extremely large magnetoresistance. Appl. Phys. Lett. 21 March 2022; 120 (12): 123101. https://doi.org/10.1063/5.0087141
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