We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.
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7 March 2022
Research Article|
March 08 2022
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Mathias Schubert
;
Mathias Schubert
a)
1
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
a)Authors to whom correspondence should be addressed: [email protected]. URL: http://ellipsometry.unl.edu and [email protected]. URL: https://c3nit.se/; https://liu.se/en/research/themac
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Sean Knight
;
Sean Knight
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
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Steffen Richter
;
Steffen Richter
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
3
Solid State Physics and NanoLund, Lund University
, P. O. Box 118, S-221 00 Lund, Sweden
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Philipp Kühne
;
Philipp Kühne
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
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Vallery Stanishev
;
Vallery Stanishev
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
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Alexander Ruder
;
Alexander Ruder
1
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
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Megan Stokey
;
Megan Stokey
1
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
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Rafał Korlacki
;
Rafał Korlacki
1
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
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Klaus Irmscher
;
Klaus Irmscher
4
Leibniz-Institut für Kristallzüchtung
, 12489 Berlin, Germany
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Petr Neugebauer
;
Petr Neugebauer
5
CEITEC-Central European Institute of Technology, Brno University of Technology
, Brno, Czech Republic
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Vanya Darakchieva
Vanya Darakchieva
a)
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
3
Solid State Physics and NanoLund, Lund University
, P. O. Box 118, S-221 00 Lund, Sweden
a)Authors to whom correspondence should be addressed: [email protected]. URL: http://ellipsometry.unl.edu and [email protected]. URL: https://c3nit.se/; https://liu.se/en/research/themac
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Mathias Schubert
1,2,a)
Sean Knight
2
Steffen Richter
2,3
Philipp Kühne
2
Vallery Stanishev
2
Alexander Ruder
1
Megan Stokey
1
Rafał Korlacki
1
Klaus Irmscher
4
Petr Neugebauer
5
Vanya Darakchieva
2,3,a)
1
Department of Electrical and Computer Engineering, University of Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
2
Terahertz Materials Analysis Center and Center for III-N Technology, C3NiT-Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University
, 58183 Linköping, Sweden
3
Solid State Physics and NanoLund, Lund University
, P. O. Box 118, S-221 00 Lund, Sweden
4
Leibniz-Institut für Kristallzüchtung
, 12489 Berlin, Germany
5
CEITEC-Central European Institute of Technology, Brno University of Technology
, Brno, Czech Republic
a)Authors to whom correspondence should be addressed: [email protected]. URL: http://ellipsometry.unl.edu and [email protected]. URL: https://c3nit.se/; https://liu.se/en/research/themac
Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
Appl. Phys. Lett. 120, 102101 (2022)
Article history
Received:
December 14 2021
Accepted:
February 21 2022
Citation
Mathias Schubert, Sean Knight, Steffen Richter, Philipp Kühne, Vallery Stanishev, Alexander Ruder, Megan Stokey, Rafał Korlacki, Klaus Irmscher, Petr Neugebauer, Vanya Darakchieva; Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC. Appl. Phys. Lett. 7 March 2022; 120 (10): 102101. https://doi.org/10.1063/5.0082353
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