Molecular beam epitaxy of single-phase wurtzite N-polar ScxAl1−xN (x ∼ 0.11–0.38) has been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N-polar GaN buffer. Coherent growth of lattice-matched Sc0.18Al0.82N on GaN has been confirmed by x-ray diffraction reciprocal space mapping of the asymmetric (105) plane, whereas lattice-mismatched, fully relaxed Sc0.11Al0.89N and Sc0.30Al0.70N epilayers exhibit a crack-free surface. The on-axis N-polar crystallographic orientation is unambiguously confirmed by wet chemical etching. High electron mobility transistors using N-polar Sc0.18Al0.82N as a barrier have been grown on sapphire substrates, which present the existence of well confined two-dimensional electron gas. A Hall mobility of ∼564 cm2/V s is measured for a 15-nm-thick Sc0.18Al0.82N barrier sample with a sheet electron concentration of 4.1 × 1013 cm−2, and the corresponding sheet resistance is as low as 271 Ω/sq. The polarity-controlled epitaxy of ScxAl1−xN provides promising opportunities for applications in high-frequency and high-power electronic and ferroelectric devices.
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
Ping Wang, Ding Wang, Boyu Wang, Subhajit Mohanty, Sandra Diez, Yuanpeng Wu, Yi Sun, Elaheh Ahmadi, Zetian Mi; N-polar ScAlN and HEMTs grown by molecular beam epitaxy. Appl. Phys. Lett. 23 August 2021; 119 (8): 082101. https://doi.org/10.1063/5.0055851
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