We propose a theoretical model for describing the operation of a field-effect transistor (FET) with a MoS2 monolayer channel, which allows us to obtain an analytical approximation of the potential in the channel, that depends on the drain and gate voltages. On this basis, we make estimates for the minimum channel lengths due to the fundamental restriction of quantum tunneling through the barrier. It is shown that the relatively large effective electron mass in the MoS2 monolayer allows us to predict the creation of devices with channels of a significantly shorter (2.5–3 nm) length than in traditional silicon MOSFETs. The ultra-short channel and high enough mobility on the hafnium oxide substrate, of the order of that of silicon, make the transistor promising for the ultra-fast electronics, and, in particular, potentially suitable for 5G devices.
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