We have fabricated GaAs-based microelectromechanical systems' (MEMSs) terahertz bolometers on high-resistivity Si substrates by using a wafer-bonding technique. In contrast to polar GaAs, nonpolar Si has very small absorption in the terahertz (THz) frequency range. The wafer-bonded MEMS bolometers show a large responsivity even in the Reststrahlen band of GaAs, where the responsivity vanishes in the conventional MEMS bolometers fabricated on GaAs substrates. Furthermore, we have observed two peaks in the responsivity spectrum near the TO and LO phonon frequencies of GaAs, which originate from an interplay between strong reflection in the Reststrahlen band and strong absorption at the TO phonon frequency in the GaAs MEMS beam. The present result demonstrates that the wafer-bonded MEMS bolometers are a very good candidate for the room-temperature, fast, and sensitive broadband THz detection.
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26 July 2021
Research Article|
July 27 2021
GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique
Tianye Niu
;
Tianye Niu
a)
1
Institute of Industrial Science, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Natalia Morais;
Natalia Morais
2
Institute for Nano Quantum Information Electronics, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Boqi Qiu
;
Boqi Qiu
1
Institute of Industrial Science, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Naomi Nagai;
Naomi Nagai
1
Institute of Industrial Science, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ya Zhang
;
Ya Zhang
3
Institute of Engineering, Tokyo University of Agriculture and Technology
, Koganei-shi, Tokyo 184-8588, Japan
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Yasuhiko Arakawa
;
Yasuhiko Arakawa
2
Institute for Nano Quantum Information Electronics, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Kazuhiko Hirakawa
Kazuhiko Hirakawa
b)
1
Institute of Industrial Science, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
2
Institute for Nano Quantum Information Electronics, University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
b)Author to whom correspondence should be addressed: hirakawa@iis.u-tokyo.ac.jp
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a)
Electronic mail: nty@iis.u-tokyo.ac.jp
b)Author to whom correspondence should be addressed: hirakawa@iis.u-tokyo.ac.jp
Appl. Phys. Lett. 119, 041104 (2021)
Article history
Received:
May 28 2021
Accepted:
July 15 2021
Citation
Tianye Niu, Natalia Morais, Boqi Qiu, Naomi Nagai, Ya Zhang, Yasuhiko Arakawa, Kazuhiko Hirakawa; GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique. Appl. Phys. Lett. 26 July 2021; 119 (4): 041104. https://doi.org/10.1063/5.0058260
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