GeSn alloys have been regarded as a potential lasing material for a complementary metal–oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal nanobeam with a very small device footprint of 7 μm2 and a compact active area of ∼1.2 μm2 on a high-quality GeSn-on-insulator substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ∼18.2 kW cm−2 at 4 K, which is significantly lower than that of the unreleased nanobeam laser (∼38.4 kW cm−2 at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows quenching of lasing at a temperature of 70 K. Our demonstration offers an avenue toward developing practical group-IV light sources with high-density integration and low power consumption.
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15 November 2021
Research Article|
November 16 2021
1D photonic crystal direct bandgap GeSn-on-insulator laser
Hyo-Jun Joo
;
Hyo-Jun Joo
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Youngmin Kim
;
Youngmin Kim
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Daniel Burt
;
Daniel Burt
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Yongduck Jung
;
Yongduck Jung
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Lin Zhang;
Lin Zhang
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Melvina Chen;
Melvina Chen
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Samuel Jior Parluhutan;
Samuel Jior Parluhutan
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Dong-Ho Kang
;
Dong-Ho Kang
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Chulwon Lee;
Chulwon Lee
2
Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST)
, Daejeon 34141, South Korea
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Simone Assali
;
Simone Assali
3
Department of Engineering Physics, École Polytechnique de Montréal, Montréal
, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada
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Zoran Ikonic;
Zoran Ikonic
4
School of Electronic and Electrical Engineering, University of Leeds
, Leeds LS2 9JT, United Kingdom
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Oussama Moutanabbir
;
Oussama Moutanabbir
3
Department of Engineering Physics, École Polytechnique de Montréal, Montréal
, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada
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Yong-Hoon Cho
;
Yong-Hoon Cho
2
Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST)
, Daejeon 34141, South Korea
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Chuan Seng Tan
;
Chuan Seng Tan
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
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Donguk Nam
Donguk Nam
a)
1
School of Electrical and Electronic Engineering, Nanyang Technological University
, 50 Nanyang Avenue, Singapore 639798, Singapore
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 119, 201101 (2021)
Article history
Received:
August 13 2021
Accepted:
October 26 2021
Citation
Hyo-Jun Joo, Youngmin Kim, Daniel Burt, Yongduck Jung, Lin Zhang, Melvina Chen, Samuel Jior Parluhutan, Dong-Ho Kang, Chulwon Lee, Simone Assali, Zoran Ikonic, Oussama Moutanabbir, Yong-Hoon Cho, Chuan Seng Tan, Donguk Nam; 1D photonic crystal direct bandgap GeSn-on-insulator laser. Appl. Phys. Lett. 15 November 2021; 119 (20): 201101. https://doi.org/10.1063/5.0066935
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