Originally studied for their suitability to store information compactly, memristive networks are now being analyzed as implementations of neuromorphic circuits. An extremely high number of elements is, thus, mandatory. To surpass the limited achievable connectivity—due to the featuring size—exploiting self-assemblies has been proposed as an alternative, in turn posing new challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behavior and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature.
Spatiotemporal evolution of resistance state in simulated memristive networks
Note: This paper is part of the APL Special Collection on Neuromorphic Computing: From Quantum Materials to Emergent Connectivity.
F. Di Francesco, G. A. Sanca, C. P. Quinteros; Spatiotemporal evolution of resistance state in simulated memristive networks. Appl. Phys. Lett. 8 November 2021; 119 (19): 193502. https://doi.org/10.1063/5.0067048
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