The memtranstors employing the magnetoelectric effects have the great potential to develop artificial synaptic devices. We have fabricated a memtranstor made of the FeGa/PMN-PT/FeGa multiferroic heterostructure and used it to mimic the functions of synapses. The magnetoelectric voltage of the device can be continuously tuned by applying a train of electric-field pulses. Consequently, synaptic plasticity, including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity, has been demonstrated in the memtranstor at room temperature. Simulations on a neural network made of an array of the memtranstors reveal the capability of pattern learning with a high accuracy.
Artificial synaptic device and neural network based on the FeGa/PMN-PT/FeGa memtranstor
Note: This paper is part of the APL Special Collection on Neuromorphic Computing: From Quantum Materials to Emergent Connectivity.
Jian-Xin Shen, Hang Li, Wen-Hong Wang, Shou-Guo Wang, Young Sun; Artificial synaptic device and neural network based on the FeGa/PMN-PT/FeGa memtranstor. Appl. Phys. Lett. 8 November 2021; 119 (19): 192902. https://doi.org/10.1063/5.0069385
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