Two-dimensional, honeycomb, and sandwich-structured transition metal dichalcogenides (TMDs) have two nonequivalent energy valleys at the six corners of the hexagonal first Brillouin zone, resulting in promising applications in valleytronics. Here, based on the WSe2/CrSe2 heterojunction, biaxial and uniaxial tensile strains with magnitudes of 0%–6% are demonstrated to have a similar effect on magnetism-induced valley splitting in the lowest conduction band of WSe2. However, at larger magnitudes of 6%–10%, uniaxial strain dramatically decreases the valley splitting. This decrease in valley splitting can be understood by the spin-orbit coupling induced different spin splitting between the two valleys. The findings provide valuable guidance for the valleytronic applications of TMDs.
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18 October 2021
Research Article|
October 18 2021
Effect of strain engineering on magnetism-induced valley splitting in WSe2 based on the WSe2/CrSe2 heterojunction
Cunyuan Jiang;
Cunyuan Jiang
1
International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University
, Zhengzhou 450001, China
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Zhiyao Yang;
Zhiyao Yang
2
Queen Mary University of London Engineering School, Northwest Polytechnical University
, Xi'an 710072, China
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Wen Xiong
;
Wen Xiong
3
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences
, Chongqing 400714, China
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Fei Wang
Fei Wang
a)
1
International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University
, Zhengzhou 450001, China
a)Author to whom correspondence should be addressed: wfei@zzu.edu.cn
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a)Author to whom correspondence should be addressed: wfei@zzu.edu.cn
Appl. Phys. Lett. 119, 162101 (2021)
Article history
Received:
August 04 2021
Accepted:
October 07 2021
Citation
Cunyuan Jiang, Zhiyao Yang, Wen Xiong, Fei Wang; Effect of strain engineering on magnetism-induced valley splitting in WSe2 based on the WSe2/CrSe2 heterojunction. Appl. Phys. Lett. 18 October 2021; 119 (16): 162101. https://doi.org/10.1063/5.0065762
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