Ongoing active development of modern radio frequency electronic devices operating in the millimeter (V) band, such as fifth-generation wireless communications, demands new materials to control electromagnetic interference, compatibility, and reliability of such systems. This work investigates feasibility absorptive non-reflective thin coatings deposition on dielectric substrates using simultaneous magnetron co-deposition. For this, electromagnetic waves propagation in the millimeter band through in micrometer-thick Al–Si films of varied composition was studied. The co-deposition process was controlled by the ratio of sputtered atoms fluxes. Graded segregation was observed under certain parameters of the co-deposition process, resulting in a depth gradient of an aluminum content, as confirmed by the secondary ion mass spectrometry study. A qualitative model was proposed involving aluminum-induced silicon recrystallization happening in the course of a known aluminum interlayer exchange process. The observed Al–Si segregation effect in micrometer-thick films allows for preparation of the non-reflective and absorptive material for operation in the V-band with reflection losses more than 10 dB and transmission losses around 5 dB in the bandwidth of up to 20 GHz.
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18 October 2021
Research Article|
October 19 2021
Gradient magnetron co-sputtered μm-thick Al–Si films on dielectric substrates for operation in the millimeter-wave band
Special Collection:
Advances in 5G Physics, Materials, and Devices
Alexey A. Serdobintsev
;
Alexey A. Serdobintsev
1
Saratov State University
, 83 Astrakhanskaya St., Saratov 410004, Russia
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Victor V. Galushka
;
Victor V. Galushka
1
Saratov State University
, 83 Astrakhanskaya St., Saratov 410004, Russia
2
Saratov Branch, Institute of Radio Engineering and Electronics, RAS
, Saratov 410019, Russia
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Ilya O. Kozhevnikov
;
Ilya O. Kozhevnikov
1
Saratov State University
, 83 Astrakhanskaya St., Saratov 410004, Russia
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Anton M. Pavlov
;
Anton M. Pavlov
1
Saratov State University
, 83 Astrakhanskaya St., Saratov 410004, Russia
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Andrey V. Starodubov
Andrey V. Starodubov
a)
1
Saratov State University
, 83 Astrakhanskaya St., Saratov 410004, Russia
2
Saratov Branch, Institute of Radio Engineering and Electronics, RAS
, Saratov 410019, Russia
a)Author to whom correspondence should be addressed: StarodubovAV@gmail.com
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a)Author to whom correspondence should be addressed: StarodubovAV@gmail.com
Note: This paper is part of the APL Special Collection on Advances in 5G Physics, Materials, and Devices.
Appl. Phys. Lett. 119, 161906 (2021)
Article history
Received:
May 31 2021
Accepted:
September 29 2021
Citation
Alexey A. Serdobintsev, Victor V. Galushka, Ilya O. Kozhevnikov, Anton M. Pavlov, Andrey V. Starodubov; Gradient magnetron co-sputtered μm-thick Al–Si films on dielectric substrates for operation in the millimeter-wave band. Appl. Phys. Lett. 18 October 2021; 119 (16): 161906. https://doi.org/10.1063/5.0058572
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