Using the semibulk approach, p-InxGa1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with an In content of ∼15.2% increased by two orders of magnitude from 5.22 × 1017 to 5.28 × 1019 cm−3. The resistivity and mobility of the templates decreased gradually from 3.13 cm and 3.82 cm2/V s for p-GaN to 0.24 cm and 0.48 cm2/V s for p-SB with an In content of 15.2%. Temperature dependent Hall measurements were conducted to estimate the activation energy of the p-SB template. The p-SB with the In content of ∼15.2% is estimated to have an activation energy of 29 meV. These heavily doped p-SB templates have comparable material qualities to that of GaN. The atomic force microscopy height retraces of p-SB films show device quality surface morphology, with root mean square roughness ranging from 2.53 to 4.84 nm. The current results can impact the performances of several nitride-based devices, such as laser diodes, LEDs, solar cells, and photodetectors.
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20 September 2021
Research Article|
September 20 2021
P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology
Evyn L. Routh
;
Evyn L. Routh
a)
1
Department of Materials Science & Engineering, North Carolina State University
, Raleigh, North Carolina 27695, USA
a)Author to whom correspondence should be addressed: [email protected]
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Mostafa Abdelhamid
;
Mostafa Abdelhamid
2
Department of Electrical & Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695, USA
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Peter Colter;
Peter Colter
2
Department of Electrical & Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695, USA
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N. A. El-Masry;
N. A. El-Masry
1
Department of Materials Science & Engineering, North Carolina State University
, Raleigh, North Carolina 27695, USA
3
National Science Foundation
, Alexandria, Virginia 22314, USA
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S. M. Bedair
S. M. Bedair
2
Department of Electrical & Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695, USA
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 119, 122101 (2021)
Article history
Received:
July 30 2021
Accepted:
September 03 2021
Citation
Evyn L. Routh, Mostafa Abdelhamid, Peter Colter, N. A. El-Masry, S. M. Bedair; P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology. Appl. Phys. Lett. 20 September 2021; 119 (12): 122101. https://doi.org/10.1063/5.0065194
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