Reinforcement of power factor in N-type multiphase thin film of Si_1−x−yGe_xSn_y by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity

As the first-generation semiconductor, silicon (Si) exhibits promising prospects in thermoelectric (TE) convention application with the advantages of un-toxic, abundant, robust, and compliant to the integrated circuit. However, Si-based TE materials are always implemented for high-temperature application and deficient at room temperature (RT) ambience. This study displays an N-type Si_1−x−yGe_xSn_y thin film by carrying out the strategy of metallic modulation doping for enhancing its power factor (PF). It was distinct to observe the extra carriers poured from the precipitated Sn particles without prominent degradation of mobility while sustaining appreciable thermal conductivity. The PF of 12.21 $μW cm−1 K−2$ and zT of 0.27 were achieved at 125 °C, which illustrated the significant potential for implementation at near RT ambiance.