Charge configuration memory (CCM) device operation is based on the controllable reconfiguration of electronic domains in a charge-density-wave material. Since the dominant effect involves the manipulation of electrons rather than atoms, the devices can display sub-picosecond switching speed and ultralow, few femtojoule switching energy. The mechanisms involved in switching between domain states of different electrical resistances are highly non-trivial and involve trapping non-equilibrium charges within topologically protected domain states. Here, we discuss the underlying physics that are deemed essential for the operation of CCM devices, focusing on the unusual asymmetry between non-thermal “write” processes and thermal “erase” processes from the point of view of the mechanism in relation to the thermal dynamics.
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Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2
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5 July 2021
Research Article|
July 08 2021
Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2
Special Collection:
Charge-Density-Wave Quantum Materials and Devices
D. Mihailovic
;
D. Mihailovic
a)
1
Jozef Stefan Institute
, Jamova 39, Ljubljana SI-1000, Slovenia
2
CENN Nanocenter
, Jamova 39, Ljubljana SI-1000, Slovenia
a)Author to whom correspondence should be addressed: [email protected]
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D. Svetin;
D. Svetin
1
Jozef Stefan Institute
, Jamova 39, Ljubljana SI-1000, Slovenia
2
CENN Nanocenter
, Jamova 39, Ljubljana SI-1000, Slovenia
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I. Vaskivskyi
;
I. Vaskivskyi
1
Jozef Stefan Institute
, Jamova 39, Ljubljana SI-1000, Slovenia
2
CENN Nanocenter
, Jamova 39, Ljubljana SI-1000, Slovenia
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R. Venturini
;
R. Venturini
1
Jozef Stefan Institute
, Jamova 39, Ljubljana SI-1000, Slovenia
4
Faculty for Mathematics and Physics, University of Ljubljana
, Jadranska 19, Ljubljana SI-1000, Slovenia
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B. Lipovšek
;
B. Lipovšek
3
Faculty of Electrical Engineering, University of Ljubljana
, Tržaška cesta 25, Ljubljana SI-1000, Slovenia
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A. Mraz
A. Mraz
1
Jozef Stefan Institute
, Jamova 39, Ljubljana SI-1000, Slovenia
3
Faculty of Electrical Engineering, University of Ljubljana
, Tržaška cesta 25, Ljubljana SI-1000, Slovenia
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a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the APL Special Collection on Charge-Density-Wave Quantum Materials and Devices.
Appl. Phys. Lett. 119, 013106 (2021)
Article history
Received:
March 30 2021
Accepted:
May 31 2021
Citation
D. Mihailovic, D. Svetin, I. Vaskivskyi, R. Venturini, B. Lipovšek, A. Mraz; Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2. Appl. Phys. Lett. 5 July 2021; 119 (1): 013106. https://doi.org/10.1063/5.0052311
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