Herein, we propose and demonstrate the edge termination for GaN-based one-sided abrupt p–n junctions. The structure is comprised of a combination of a shallow negative bevel mesa and selective-area p-type doping under the mesa. Based on the Technology Computer Aided Design (TCAD) simulation, the maximum electric field at the junction edge is markedly reduced to approximately 1.3 times that of the parallel-plane electric field in the proposed structure, which is almost half of the unimplanted diode. The TCAD simulation also shows that the shallow mesa angle of effectively reduces the optimum acceptor concentration (Na) in the implanted region and enhances the breakdown voltage. The optimum Na value can be covered by the proposed technology based on the Mg-ion implantation and subsequent ultra-high-pressure annealing (UHPA). Using the formation of the shallow bevel mesa, the Mg-ion implantation, and the UHPA process, we experimentally demonstrate the p–n diodes with a breakdown voltage over 600 V, which is in good agreement with the TCAD simulation. The proposed method can be applied to a vertical trench-gate metal-oxide-semiconductor field-effect transistor with a high figure-of-merit.
Skip Nav Destination
Article navigation
1 March 2021
Research Article|
March 03 2021
Mg-implanted bevel edge termination structure for GaN power device applications
Maciej Matys
;
Maciej Matys
a)
1
Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Takashi Ishida;
Takashi Ishida
1
Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Kyung Pil Nam;
Kyung Pil Nam
1
Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Hideki Sakurai;
Hideki Sakurai
1
Nagoya University
, Nagoya 464-8601, Japan
2
ATI, ULVAC, Inc
., Chigasaki, Kanagawa 253-8543, Japan
Search for other works by this author on:
Tetsuo Narita
;
Tetsuo Narita
3
Toyota Central R&D Labs., Inc.
, Nagakute, Aichi 480-1192, Japan
Search for other works by this author on:
Tsutomu Uesugi;
Tsutomu Uesugi
1
Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Michal Bockowski
;
Michal Bockowski
1
Nagoya University
, Nagoya 464-8601, Japan
4
Institute of High Pressure Physics, Polish Academy of Sciences
, Sokolowska 29/37, 01-142 Warsaw, Poland
Search for other works by this author on:
Jun Suda
;
Jun Suda
1
Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Tetsu Kachi
Appl. Phys. Lett. 118, 093502 (2021)
Article history
Received:
November 30 2020
Accepted:
February 13 2021
Citation
Maciej Matys, Takashi Ishida, Kyung Pil Nam, Hideki Sakurai, Tetsuo Narita, Tsutomu Uesugi, Michal Bockowski, Jun Suda, Tetsu Kachi; Mg-implanted bevel edge termination structure for GaN power device applications. Appl. Phys. Lett. 1 March 2021; 118 (9): 093502. https://doi.org/10.1063/5.0039183
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
Appl. Phys. Lett. (September 2019)
Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
Appl. Phys. Lett. (February 2022)
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
J. Appl. Phys. (May 2022)
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
J. Appl. Phys. (August 2024)