The wake-up in doped hafnia ferroelectric devices is an extremely important process to understand in order to integrate these materials successfully into working ferroelectric memory devices. The crystallographic origins of this process are clarified with three main mechanisms. Strain relaxation in the ferroelectric orthorhombic phase led to an adjustment of the unit cell volume toward a “bulk-like” value. The undistorted cell allowed for easier polarizability within the unit cell, allowing higher polarization. Reversible phase transformations between the tetragonal and orthorhombic phases depend on the nature of the strain. Finally, a model is developed describing grain reorientation, inducing a 90° rotation of the orthorhombic unit cell and allowing the phase to respond to the E-field more readily under cycling.
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1 March 2021
Research Article|
March 02 2021
Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Sean R. C. McMitchell
;
Sean R. C. McMitchell
a)
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
a)Author to whom correspondence should be addressed: sean.mcmitchell@imec.be
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Sergiu Clima
;
Sergiu Clima
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Nicolo' Ronchi;
Nicolo' Ronchi
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Kaustuv Banerjee;
Kaustuv Banerjee
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Umberto Celano
;
Umberto Celano
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
2
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente
, 7522 NH Enschede, The Netherlands
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Mihaela Popovici;
Mihaela Popovici
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Luca Di Piazza;
Luca Di Piazza
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Geert Van den Bosch;
Geert Van den Bosch
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
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Jan Van Houdt
Jan Van Houdt
1
imec
, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium
3
Physics and Astronomy, KU Leuven
, 3000 Leuven, Belgium
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a)Author to whom correspondence should be addressed: sean.mcmitchell@imec.be
Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
Appl. Phys. Lett. 118, 092902 (2021)
Article history
Received:
September 15 2020
Accepted:
February 12 2021
Citation
Sean R. C. McMitchell, Sergiu Clima, Nicolo' Ronchi, Kaustuv Banerjee, Umberto Celano, Mihaela Popovici, Luca Di Piazza, Geert Van den Bosch, Jan Van Houdt; Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia. Appl. Phys. Lett. 1 March 2021; 118 (9): 092902. https://doi.org/10.1063/5.0029691
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