When we applied colloidal quantum dots (QDs) for quantum dot light emitting diodes, it was well known that shell thickness played an important role in core protection, confinement of electrons and holes, and charge injection efficiency. However, although the shell thickness dependence of electroluminescence properties was reported, carrier injection efficiency has not been discussed in detail. In this paper, we investigated the effect of shell thickness on the carrier injection efficiency that was evaluated by photoelectrochemical measurements. By comparing the product of internal quantum yield of photoluminescence and the evaluated carrier injection efficiency with external quantum efficiency (EQE) for QDs with various shell thicknesses, we found that the optimal shell thickness for increasing EQE is determined by the balance between protection of QD's surface and carrier injection efficiency.
Skip Nav Destination
Article navigation
8 February 2021
Research Article|
February 10 2021
Photoelectrochemical investigation of charge injection efficiency for quantum dot light-emitting diode
Keisuke Kitano
;
Keisuke Kitano
a)
1
Life and Environment Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
2
The University of Tokyo Sharp Labs, Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
a)Author to whom correspondence should be addressed: kitano.keisuke@sharp.co.jp
Search for other works by this author on:
Yusuke Sakakibara;
Yusuke Sakakibara
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Masashi Kago;
Masashi Kago
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Takahiro Doe
;
Takahiro Doe
2
The University of Tokyo Sharp Labs, Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Masaya Ueda;
Masaya Ueda
2
The University of Tokyo Sharp Labs, Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Tatsuya Ryowa;
Tatsuya Ryowa
2
The University of Tokyo Sharp Labs, Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Makoto Izumi;
Makoto Izumi
2
The University of Tokyo Sharp Labs, Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Research and Development BU, Sharp Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
Search for other works by this author on:
Hiroyasu Nishi;
Hiroyasu Nishi
4
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Search for other works by this author on:
Tetsu Tatsuma;
Tetsu Tatsuma
4
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Search for other works by this author on:
Yasuhiko Arakawa
Yasuhiko Arakawa
5
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Search for other works by this author on:
a)Author to whom correspondence should be addressed: kitano.keisuke@sharp.co.jp
Appl. Phys. Lett. 118, 063505 (2021)
Article history
Received:
December 09 2020
Accepted:
January 22 2021
Citation
Keisuke Kitano, Yusuke Sakakibara, Masashi Kago, Takahiro Doe, Masaya Ueda, Tatsuya Ryowa, Makoto Izumi, Hiroyasu Nishi, Tetsu Tatsuma, Yasuhiko Arakawa; Photoelectrochemical investigation of charge injection efficiency for quantum dot light-emitting diode. Appl. Phys. Lett. 8 February 2021; 118 (6): 063505. https://doi.org/10.1063/5.0039996
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Compact widely tunable laser integrated on an indium phosphide membrane platform
Tasfia Kabir, Yi Wang, et al.
Related Content
Fluoride ligand exchange for quantum dot light-emitting diodes with improved efficiency and stability
Appl. Phys. Lett. (December 2022)
Effect of length of ZnO nanorods on photoelectrochemical efficiency for solar cell applications.
AIP Conference Proceedings (November 2020)
Photocatalytic and photoelectrochemical activities of strained BiVO4
Appl. Phys. Lett. (April 2021)
CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells
Appl. Phys. Lett. (July 2012)
Element doping-induced effects in Zn-doped CdTe quantum-dot system: Insights from an ultrafast dynamics perspective
J. Chem. Phys. (January 2022)