We report the observation of ferroelectricity in hafnium-zirconium-oxide thin films in the as-deposited state, namely, after deposition at a low temperature of 300 °C without post-metallization annealing. The Hf0.5Zr0.5O2 (HZO) thin film was interposed between two TiO2 interlayers, and all films were produced by plasma enhanced atomic layer deposition and integrated into a TiN-based metal-insulator-metal capacitor. The ferroelectric nature of the as-deposited HZO film was evaluated by a polarization-voltage hysteresis loop, and a 2Pr value of ∼7.4 μC/cm2 was achieved. Grazing incidence x-ray diffraction measurements and atomic-resolution scanning transmission electron microscopy characterization revealed the co-existence of fully crystallized polar orthorhombic and monoclinic phases of the dielectric in the as-deposited sample. We concluded that the nucleation and growth of the crystalline polar non-centrosymmetric orthorhombic phases in the 10 nm HZO thin film were prompted by the available energy from the plasma and the tensile lattice mismatch strain provided by the TiO2 interlayer.
Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers
Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
Yuanshen Qi, Xianbin Xu, Igor Krylov, Moshe Eizenberg; Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers. Appl. Phys. Lett. 18 January 2021; 118 (3): 032906. https://doi.org/10.1063/5.0037887
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