We demonstrate a photoelectrical readout of negatively charged nitrogen-vacancy (NV−) centers by utilizing a lateral diamond p–i–n diode structure. We found that the photocarriers generated at NV centers are efficiently extracted in the depletion layer even at zero voltage. The transport mechanism for photoexcited minority carriers was investigated by varying the nitrogen ion implantation dose. The minority carrier diffusion length decreased when the photocarriers passed through the implantation region, particularly at a high nitrogen ion dose. From photoelectrically detected magnetic resonance (PDMR) measurements, the photocurrent was found to exhibit a minimum at approximately 2.87 GHz upon microwave irradiation with a contrast of 12%, while this dip was observed to split upon the application of a static magnetic field. The PDMR signal was found to depend on the measurement position. This study paves the way for efficient electrical detection for quantum sensors based on device technologies.
Skip Nav Destination
,
,
,
,
,
,
,
,
,
,
,
,
,
Article navigation
21 June 2021
Research Article|
June 25 2021
Photoelectrical detection of nitrogen-vacancy centers by utilizing diamond lateral p–i–n diodes
T. Murooka
;
T. Murooka
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
M. Shiigai;
M. Shiigai
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
Y. Hironaka;
Y. Hironaka
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
T. Tsuji
;
T. Tsuji
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
B. Yang;
B. Yang
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
T. M. Hoang
;
T. M. Hoang
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
K. Suda;
K. Suda
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
K. Mizuno
;
K. Mizuno
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
H. Kato;
H. Kato
2
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Umezono
, Tsukuba, Ibaraki 305-8568, Japan
Search for other works by this author on:
T. Makino;
T. Makino
2
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Umezono
, Tsukuba, Ibaraki 305-8568, Japan
Search for other works by this author on:
M. Ogura
;
M. Ogura
2
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Umezono
, Tsukuba, Ibaraki 305-8568, Japan
Search for other works by this author on:
S. Yamasaki;
S. Yamasaki
2
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Umezono
, Tsukuba, Ibaraki 305-8568, Japan
Search for other works by this author on:
M. Hatano
;
M. Hatano
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
Search for other works by this author on:
T. Iwasaki
T. Iwasaki
a)
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
T. Murooka
1
M. Shiigai
1
Y. Hironaka
1
T. Tsuji
1
B. Yang
1
T. M. Hoang
1
K. Suda
1
K. Mizuno
1
H. Kato
2
T. Makino
2
M. Ogura
2
S. Yamasaki
2
M. Hatano
1
T. Iwasaki
1,a)
1
School of Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, Ookayama, Meguro, Tokyo 152-8552, Japan
2
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Umezono
, Tsukuba, Ibaraki 305-8568, Japan
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 253502 (2021)
Article history
Received:
May 04 2021
Accepted:
May 27 2021
Citation
T. Murooka, M. Shiigai, Y. Hironaka, T. Tsuji, B. Yang, T. M. Hoang, K. Suda, K. Mizuno, H. Kato, T. Makino, M. Ogura, S. Yamasaki, M. Hatano, T. Iwasaki; Photoelectrical detection of nitrogen-vacancy centers by utilizing diamond lateral p–i–n diodes. Appl. Phys. Lett. 21 June 2021; 118 (25): 253502. https://doi.org/10.1063/5.0055852
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Related Content
Magnetic field sensitivity of the photoelectrically read nitrogen-vacancy centers in diamond
Appl. Phys. Lett. (April 2022)
Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature
Appl. Phys. Lett. (November 2022)
Photovoltaic detection of magnetic resonance in a‐Si:H solar cells
AIP Conf. Proc. (October 1984)
Photoelectrically detected magnetic resonance on sulfur doped NV centers
AIP Advances (March 2023)
Efficient and all-carbon electrical readout of a NV-based quantum sensor
Appl. Phys. Lett. (May 2023)