Antiferroelectric (AFE) properties of ultrathin ZrO2 films prepared by atomic layer deposition are systematically investigated with different film thicknesses and postmetallization annealing (PMA) temperatures. After wake-up, excellent AFE characteristics are observed for the ZrO2 thickness from 5.3 to 9.5 nm through the polarization–electric field and switching current–electric field measurements. The thickness dependence and PMA temperature dependence of AFE properties and their relations to the crystalline phase are discussed. The best AFE properties, such as the largest maximum polarization and a relatively small remanent polarization, are obtained in 6 nm-thick ZrO2 with 400 °C PMA, attributed to the existence of the highest ratio of a tetragonal phase in the film. AFE properties are relatively degraded in other thicknesses of ZrO2 films with 400 °C PMA, which is attributable to the existence of large amounts of an amorphous phase and a monoclinic phase in 5.3 and 9.5 nm-thick ZrO2 films, respectively. Furthermore, it is found that higher PMA temperature of 600 °C can lead to a relatively larger remanent polarization for AFE ZrO2 due to the increase in the ratio of the orthorhombic phase in ZrO2 films.
Skip Nav Destination
CHORUS
Article navigation
7 June 2021
Research Article|
June 10 2021
Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition
Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Xuan Luo
;
Xuan Luo
a)
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
a)Author to whom correspondence should be addressed: luo@mosfet.t.u-tokyo.ac.jp
Search for other works by this author on:
Kasidit Toprasertpong
;
Kasidit Toprasertpong
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Mitsuru Takenaka
;
Mitsuru Takenaka
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Shinichi Takagi
Shinichi Takagi
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
a)Author to whom correspondence should be addressed: luo@mosfet.t.u-tokyo.ac.jp
Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
Appl. Phys. Lett. 118, 232904 (2021)
Article history
Received:
March 22 2021
Accepted:
May 22 2021
Citation
Xuan Luo, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi; Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition. Appl. Phys. Lett. 7 June 2021; 118 (23): 232904. https://doi.org/10.1063/5.0051068
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Related Content
Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process
Appl. Phys. Lett. (June 2014)
Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications
Appl. Phys. Rev. (April 2024)
Ohmic contact formation on n-type Ge by direct deposition of TiN
Appl. Phys. Lett. (May 2011)
Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film
Appl. Phys. Lett. (August 2024)