We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for ScxAl1-xN films with Sc contents in the range of 0.14–0.36. Sc0.20Al0.80N, which is nearly lattice-matched with GaN, exhibiting a coercive field of ∼ 4.2 MV/cm at 10 kHz and a remnant polarization of ∼135 μC/cm2. After electrical poling, Sc0.20Al0.80N presents a polarization retention time beyond 105 s. No obvious fatigue behavior can be found with up to 3 × 105 switching cycles. The work reported here is more than a technical achievement. The realization of ferroelectric single-crystalline III–V semiconductors by molecular beam epitaxy promises a thickness scaling into the nanometer regime and makes it possible to integrate high-performance ferroelectric functionality with well-established semiconductor platforms for a broad range of electronic, optoelectronic, and photonic device applications.
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Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
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31 May 2021
Research Article|
June 03 2021
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
Ping Wang
;
Ping Wang
1
Department of Electrical Engineering and Computer Science, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Ding Wang
;
Ding Wang
1
Department of Electrical Engineering and Computer Science, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Nguyen M. Vu
;
Nguyen M. Vu
2
Department of Material Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Tony Chiang;
Tony Chiang
2
Department of Material Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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John T. Heron
;
John T. Heron
2
Department of Material Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Zetian Mi
Zetian Mi
a)
1
Department of Electrical Engineering and Computer Science, University of Michigan
, Ann Arbor, Michigan 48109, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 223504 (2021)
Article history
Received:
April 19 2021
Accepted:
May 16 2021
Citation
Ping Wang, Ding Wang, Nguyen M. Vu, Tony Chiang, John T. Heron, Zetian Mi; Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy. Appl. Phys. Lett. 31 May 2021; 118 (22): 223504. https://doi.org/10.1063/5.0054539
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