We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.
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31 May 2021
Research Article|
June 01 2021
Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices
Special Collection:
Charge-Density-Wave Quantum Materials and Devices
A. Mohammadzadeh
;
A. Mohammadzadeh
1
Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California—Riverside
, Riverside, California 92521, USA
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A. Rehman
;
A. Rehman
2
CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences
, Warsaw 01-142, Poland
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F. Kargar
;
F. Kargar
1
Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California—Riverside
, Riverside, California 92521, USA
3
Phonon Optimized Engineered Materials Center, Materials Science and Engineering Program, Bourns College of Engineering, University of California
—Riverside, Riverside, California 92521, USA
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S. Rumyantsev
;
S. Rumyantsev
2
CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences
, Warsaw 01-142, Poland
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J. M. Smulko
;
J. M. Smulko
4
Department of Metrology and Optoelectronics, Gdańsk University of Technology
, Gdańsk 80-233, Poland
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W. Knap
;
W. Knap
2
CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences
, Warsaw 01-142, Poland
5
Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology
, Warsaw 02-822, Poland
6
Laboratoire Charles Coulomb, University of Montpellier and CNRS
, Montpellier 34950, France
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R. K. Lake
;
R. K. Lake
7
Laboratory for Terahertz and Terascale Electronics, Department of Electrical and Computer Engineering, University of California—Riverside
, Riverside, California 92521, USA
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A. A. Balandin
A. A. Balandin
a)
1
Nano-Device Laboratory, Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California—Riverside
, Riverside, California 92521, USA
3
Phonon Optimized Engineered Materials Center, Materials Science and Engineering Program, Bourns College of Engineering, University of California
—Riverside, Riverside, California 92521, USA
a)Author to whom correspondence should be addressed: [email protected]. URL: http://balandingroup.ucr.edu/
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a)Author to whom correspondence should be addressed: [email protected]. URL: http://balandingroup.ucr.edu/
Note: This paper is part of the APL Special Collection on Charge-Density-Wave Quantum Materials and Devices.
Appl. Phys. Lett. 118, 223101 (2021)
Article history
Received:
April 28 2021
Accepted:
May 10 2021
Citation
A. Mohammadzadeh, A. Rehman, F. Kargar, S. Rumyantsev, J. M. Smulko, W. Knap, R. K. Lake, A. A. Balandin; Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices. Appl. Phys. Lett. 31 May 2021; 118 (22): 223101. https://doi.org/10.1063/5.0055401
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