We investigate the Ti-doping effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy measurements and first-principle calculations. Although the Ti-doping induced phase evolution seems regular with an increase of the doping concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the doping-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-doping retains the electronic flatband and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials.
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24 May 2021
Research Article|
May 26 2021
Chiral charge density waves induced by Ti-doping in 1T-TaS2
Special Collection:
Charge-Density-Wave Quantum Materials and Devices
J. J. Gao;
J. J. Gao
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
2
Science Island Branch of Graduate School, University of Science and Technology of China
, Hefei 230026, China
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W. H. Zhang;
W. H. Zhang
3
Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University
, Hangzhou 310027, China
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J. G. Si;
J. G. Si
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
2
Science Island Branch of Graduate School, University of Science and Technology of China
, Hefei 230026, China
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X. Luo
;
X. Luo
a)
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
a)Authors to whom correspondence should be addressed: xluo@issp.ac.cn; wjlu@issp.ac.cn; yiyin@zju.edu.cn; and ypsun@issp.ac.cn
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J. Yan;
J. Yan
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
2
Science Island Branch of Graduate School, University of Science and Technology of China
, Hefei 230026, China
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Z. Z. Jiang;
Z. Z. Jiang
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
2
Science Island Branch of Graduate School, University of Science and Technology of China
, Hefei 230026, China
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W. Wang;
W. Wang
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
2
Science Island Branch of Graduate School, University of Science and Technology of China
, Hefei 230026, China
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H. Y. Lv;
H. Y. Lv
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
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P. Tong;
P. Tong
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
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W. H. Song
;
W. H. Song
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
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X. B. Zhu
;
X. B. Zhu
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
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W. J. Lu
;
W. J. Lu
a)
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
a)Authors to whom correspondence should be addressed: xluo@issp.ac.cn; wjlu@issp.ac.cn; yiyin@zju.edu.cn; and ypsun@issp.ac.cn
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Y. Yin;
Y. Yin
a)
3
Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University
, Hangzhou 310027, China
5
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
a)Authors to whom correspondence should be addressed: xluo@issp.ac.cn; wjlu@issp.ac.cn; yiyin@zju.edu.cn; and ypsun@issp.ac.cn
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Y. P. Sun
Y. P. Sun
a)
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
4
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences
, Hefei 230031, China
5
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
a)Authors to whom correspondence should be addressed: xluo@issp.ac.cn; wjlu@issp.ac.cn; yiyin@zju.edu.cn; and ypsun@issp.ac.cn
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a)Authors to whom correspondence should be addressed: xluo@issp.ac.cn; wjlu@issp.ac.cn; yiyin@zju.edu.cn; and ypsun@issp.ac.cn
Note: This paper is part of the APL Special Collection on Charge-Density-Wave Quantum Materials and Devices.
Appl. Phys. Lett. 118, 213105 (2021)
Article history
Received:
March 30 2021
Accepted:
May 10 2021
Citation
J. J. Gao, W. H. Zhang, J. G. Si, X. Luo, J. Yan, Z. Z. Jiang, W. Wang, H. Y. Lv, P. Tong, W. H. Song, X. B. Zhu, W. J. Lu, Y. Yin, Y. P. Sun; Chiral charge density waves induced by Ti-doping in 1T-TaS2. Appl. Phys. Lett. 24 May 2021; 118 (21): 213105. https://doi.org/10.1063/5.0052240
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