In this study, we evaluated the degradation mechanism in quantum dot light-emitting diodes (QLEDs) to improve the device lifetime. We measured the hole mobility using the delay time of transient electroluminescence for three types of hole transport layer (HTL) materials. In addition, we estimated the degradation of luminance efficiency and hole mobility under constant current drive. As a result, the HTL material with a higher hole mobility yielded longer QLED device lifetimes. Through substitution of the HTL material from poly (9-vinylcarbazole) (PVK) to poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), the hole mobility and the 95% luminance lifetime from initial luminance improved from 0.5 × 10−5 cm2/V⋅s and 2.90 h at J = 10 mA/cm2 to 1.1 × 10−5 cm2/V⋅s and 179 h, respectively. Moreover, we clarified that the degradation of the luminescent efficiency is correlated with the hole mobility.
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17 May 2021
Research Article|
May 19 2021
Evaluation of degradation behavior in quantum dot light-emitting diode with different hole transport materials via transient electroluminescence
Takahiro Doe
;
Takahiro Doe
a)
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
a)Author to whom correspondence should be addressed: doe.takahiro@sharp.co.jp
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Keisuke Kitano
;
Keisuke Kitano
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Satoru Yamamoto;
Satoru Yamamoto
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Masaki Yamamoto;
Masaki Yamamoto
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Kazuki Goto;
Kazuki Goto
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Yusuke Sakakibara;
Yusuke Sakakibara
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Tadashi Kobashi;
Tadashi Kobashi
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Hirohisa Yamada;
Hirohisa Yamada
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Masaya Ueda;
Masaya Ueda
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Tatsuya Ryowa;
Tatsuya Ryowa
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Makoto Izumi;
Makoto Izumi
1
Life and Environment Solution Laboratories, Corporate Research and Development BU, SHARP Corporation
, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
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Yasuhiko Arakawa
Yasuhiko Arakawa
2
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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a)Author to whom correspondence should be addressed: doe.takahiro@sharp.co.jp
Appl. Phys. Lett. 118, 203503 (2021)
Article history
Received:
December 25 2020
Accepted:
April 29 2021
Citation
Takahiro Doe, Keisuke Kitano, Satoru Yamamoto, Masaki Yamamoto, Kazuki Goto, Yusuke Sakakibara, Tadashi Kobashi, Hirohisa Yamada, Masaya Ueda, Tatsuya Ryowa, Makoto Izumi, Yasuhiko Arakawa; Evaluation of degradation behavior in quantum dot light-emitting diode with different hole transport materials via transient electroluminescence. Appl. Phys. Lett. 17 May 2021; 118 (20): 203503. https://doi.org/10.1063/5.0041689
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