In this Letter, we report a back-end-of-line (BEOL), complementary metal–oxide–semiconductor (CMOS)-compatible Al0.64Sc0.36N-based ferroelectric diode that shows polarization-dependent hysteresis in its leakage currents. Our device comprises a metal/insulator/ferroelectric/metal structure (Pt/native oxide/Al0.64Sc0.36N/Pt) that is compatible with BEOL temperatures (≤ 350 °C) grown on top of a 4-in. silicon wafer. The device shows self-selective behavior as a diode with > 105 rectification ratio (for 5 V). It can suppress sneak currents without the need for additional access transistors or selectors. Furthermore, given the polarization-dependent leakage, the diode current–voltage sweeps are analogous to that of a memristor with an on/off ratio of ∼ 50 000 between low and high resistance states. Our devices also exhibit stable programed resistance states during DC cycling and a retention time longer than 1000 s at 300 K. These results demonstrate that this system has significant potential as a future high-performance post-CMOS compatible nonvolatile memory technology.
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17 May 2021
Research Article|
May 18 2021
Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
Xiwen Liu;
Xiwen Liu
1
Department of Electrical and Systems Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Jeffrey Zheng;
Jeffrey Zheng
2
Department of Material Science and Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Dixiong Wang
;
Dixiong Wang
1
Department of Electrical and Systems Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Pariasadat Musavigharavi
;
Pariasadat Musavigharavi
1
Department of Electrical and Systems Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Eric A. Stach
;
Eric A. Stach
2
Department of Material Science and Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Roy Olsson, III;
Roy Olsson, III
1
Department of Electrical and Systems Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
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Deep Jariwala
Deep Jariwala
a)
1
Department of Electrical and Systems Engineering, University of Pennsylvania
, Philadelphia, Pennsylvania 19104, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 202901 (2021)
Article history
Received:
March 28 2021
Accepted:
April 27 2021
Citation
Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson, Deep Jariwala; Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios. Appl. Phys. Lett. 17 May 2021; 118 (20): 202901. https://doi.org/10.1063/5.0051940
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