Silicon carbide (SiC) is an important wide bandgap semiconductor used for diverse applications from heat spreading to high-power electronics. It is readily doped, has high thermal conductivity, and is used for application in mature device fabrication techniques. To improve the performance of SiC electronic devices, built-in sensors, which should ideally be inexpensive integrated with the device, and not perturb device operations, are quite useful. Here, we studied the optical properties of the negatively silicon vacancy under simultaneous optical and electrical excitation to uncover the carrier dynamics, as the luminescence intensity is determined by competition between the two excitation pathways. We also observe optically detected magnetic resonance (ODMR) and observe that the ODMR contrast is decreased by injected current, which is consistent with the decrease in the pumping rate of optical excitation in the competitive process. Our studies show that an embedded quantum sensor is possible in practical SiC devices, opening new opportunities for device control and optimization.
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11 January 2021
Research Article|
January 12 2021
Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
Yuichi Yamazaki
;
Yuichi Yamazaki
a)
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Yoji Chiba;
Yoji Chiba
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
2
Graduate School of Science and Engineering, Saitama University
, Saitama 338-8570, Japan
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Shin-ichiro Sato
;
Shin-ichiro Sato
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
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Takahiro Makino;
Takahiro Makino
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
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Naoto Yamada;
Naoto Yamada
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
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Takahiro Satoh;
Takahiro Satoh
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
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Kazutoshi Kojima
;
Kazutoshi Kojima
3
National Institute of Advanced Industrial Science and Technology
, Tsukuba, Ibaraki 305-8568, Japan
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Yasuto Hijikata
;
Yasuto Hijikata
2
Graduate School of Science and Engineering, Saitama University
, Saitama 338-8570, Japan
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Hidekazu Tsuchida;
Hidekazu Tsuchida
4
Central Research Institute of Electric Power Industry
, Yokosuka, Kanagawa 240-0196, Japan
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Norihiro Hoshino;
Norihiro Hoshino
4
Central Research Institute of Electric Power Industry
, Yokosuka, Kanagawa 240-0196, Japan
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Sang-Yun Lee;
Sang-Yun Lee
5
Department of Physics and Photon Science at Gwangju Institute of Science and Technology
, Gwangju 123, South Korea
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Takeshi Ohshima
Takeshi Ohshima
1
National Institutes for Quantum and Radiological Science and Technology (QST)
, Takasaki, Gunma 370-1292, Japan
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 021106 (2021)
Article history
Received:
September 04 2020
Accepted:
December 23 2020
Citation
Yuichi Yamazaki, Yoji Chiba, Shin-ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Kazutoshi Kojima, Yasuto Hijikata, Hidekazu Tsuchida, Norihiro Hoshino, Sang-Yun Lee, Takeshi Ohshima; Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations. Appl. Phys. Lett. 11 January 2021; 118 (2): 021106. https://doi.org/10.1063/5.0028318
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