An excessive unintentional out-diffused In atom into the switching layer is a potential threat to the switching stability of memristor devices having indium tin oxide (ITO) as the electrode. We suggest that the physical factor (bombardment of Ar ions and bombardment-induced localized heat during ZnO deposition) and chemical factor (bonding dissociation energy, point defects, and bond length of atoms) are responsible for promoting the out-diffusion. The In atom acts as dopant in the ZnO lattice that degenerates the ZnO insulative behavior. Furthermore, the In ions take part in the conduction mechanism where they may compete with other mobile species to form and rupture the filament, and hence, deteriorate the switching performance. We propose a facile UV/O3 (UVO) treatment to mitigate such damaging effects. The device fabricated on the UVO-treated ITO substrate exhibits significant switching parameter improvement than that of the device manufactured on untreated ITO. This work delivers an insight into the damaging effect of out-diffusion and auto-doping processes on the reliability of memristor devices.
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Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
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26 April 2021
Research Article|
April 27 2021
Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
Firman Mangasa Simanjuntak
;
Firman Mangasa Simanjuntak
1
Centre for Electronics Frontiers, University of Southampton
, Southampton SO17 1BJ, United Kingdom
2
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
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Sridhar Chandrasekaran
;
Sridhar Chandrasekaran
3
Advanced Research Institute, Dr. MGR Educational and Research Institute
, Chennai 600095, India
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Debashis Panda
;
Debashis Panda
4
Department of Physics, National Institute of Science and Technology
, Berhampur 761 008, India
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Sailesh Rajasekaran
;
Sailesh Rajasekaran
5
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University
, Hsinchu 30010, Taiwan
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Cut Rullyani
;
Cut Rullyani
5
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University
, Hsinchu 30010, Taiwan
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Govindasamy Madhaiyan;
Govindasamy Madhaiyan
6
Institute of Physics, National Yang Ming Chiao Tung University
, Hsinchu 30010, Taiwan
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Themistoklis Prodromakis
;
Themistoklis Prodromakis
a)
1
Centre for Electronics Frontiers, University of Southampton
, Southampton SO17 1BJ, United Kingdom
a)Authors to whom correspondence should be addressed: t.prodromakis@soton.ac.uk and tseng@nctu.edu.tw
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Tseung-Yuen Tseng
Tseung-Yuen Tseng
a)
2
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
a)Authors to whom correspondence should be addressed: t.prodromakis@soton.ac.uk and tseng@nctu.edu.tw
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a)Authors to whom correspondence should be addressed: t.prodromakis@soton.ac.uk and tseng@nctu.edu.tw
Appl. Phys. Lett. 118, 173502 (2021)
Article history
Received:
February 09 2021
Accepted:
April 11 2021
Citation
Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Sailesh Rajasekaran, Cut Rullyani, Govindasamy Madhaiyan, Themistoklis Prodromakis, Tseung-Yuen Tseng; Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure. Appl. Phys. Lett. 26 April 2021; 118 (17): 173502. https://doi.org/10.1063/5.0047036
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