We report a systematic study on the magnetic, dielectric, and magnetoelectric (ME) properties of the Y-type hexaferrite (Ba0.4Sr1.6)Zn2(Fe11.3Al0.7)O22 single crystal. The phase diagrams were established by the observed magnetic anomalies under magnetic field and temperature scans for the in-plane and out-of-plane cases. Intrinsic large anisotropy in the magnetodielectric and converse ME effects was revealed. The spin-driven electric polarizations induced in the ab-plane and out-of-plane were found to be closely related to the transverse conical and alternating longitudinal conical spin structures, respectively. The amplitudes of varied magnetization ΔM are about ∼0.128 μB/f.u and ∼0.0178 μB/f.u. in the E oscillating between ±1 MV/m at 100 K, corresponding to the converse ME effect coefficient of ∼3500 ps/m and ∼480 ps/m for the in-plane and out-of-plane cases, respectively. All these results demonstrate the essential and unique spin-order-induced anisotropic ferroelectricity and ME properties in these Y-type hexaferrites.
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5 April 2021
Research Article|
April 05 2021
Anisotropic spin-driven ferroelectricity and magnetoelectric effect in a Y-type hexaferrite
L. Y. Li
;
L. Y. Li
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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W. Wang;
W. Wang
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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P. Z. Li;
P. Z. Li
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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J. B. Xian;
J. B. Xian
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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M. Zeng
;
M. Zeng
a)
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
a)Author to whom correspondence should be addressed: [email protected]
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M. F. Liu
;
M. F. Liu
2
Institute for Advanced Materials, Hubei Normal University
, Huangshi 435002, China
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Z. P. Hou;
Z. P. Hou
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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Z. Fan
;
Z. Fan
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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D. Y. Chen;
D. Y. Chen
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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M. H. Qin
;
M. H. Qin
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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X. S. Gao
;
X. S. Gao
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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X. B. Lu
;
X. B. Lu
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
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J.-M. Liu
J.-M. Liu
1
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University
, Guangzhou 510006, China
3
Laboratory of Solid State Microstructures, Nanjing University
, Nanjing 21009, China
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 142902 (2021)
Article history
Received:
January 25 2021
Accepted:
March 16 2021
Citation
L. Y. Li, W. Wang, P. Z. Li, J. B. Xian, M. Zeng, M. F. Liu, Z. P. Hou, Z. Fan, D. Y. Chen, M. H. Qin, X. S. Gao, X. B. Lu, J.-M. Liu; Anisotropic spin-driven ferroelectricity and magnetoelectric effect in a Y-type hexaferrite. Appl. Phys. Lett. 5 April 2021; 118 (14): 142902. https://doi.org/10.1063/5.0045273
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