We present a field-free spin–orbit torque magnetic random access memory (SOT-MRAM) element using an in-plane ferromagnet (FL1)/coupling layer/perpendicular ferromagnet (FL2) as a composite free layer. By using micromagnetic simulations, we investigate the magnetic switching of the composite free layer in different conditions. Leveraging on interlayer exchange coupling, a field-free and efficient spin–orbit torque-induced reversal of perpendicular magnetization is realized, which can reduce the switching current density of SOT-MRAM. When the current density is increased to a certain value, the oscillations of magnetization are observed. Furthermore, by adjusting the magnetic anisotropy of FL1 and FL2, multilevel magnetization states can be achieved by varying the amplitude of the writing current. This work paves the way toward practical spin–orbit torque-based memory, oscillating, and logic devices.
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