A ferroelectric material in a ferroelectric–dielectric heterostructure can provide a charge boost, as often discussed in the context of negative capacitance, and, in doing so, can reduce the power dissipation in field-effect transistor technology. However, there is an ongoing debate on whether the charge boost in such a heterostructure is a transient phenomenon or a steady state one. In this Letter, we use the positive-up-negative-down (PUND) measurement technique on a ferroelectric–dielectric (FE–DE) capacitor to show that the charge boost is a steady-state effect—i.e., the charge boost remains intact after the initial transient effects subside and all the voltages in the system reach constant values and steady states. We also demonstrate differential charge boost in steady state using a staircase voltage pulse measurement technique. An experimentally calibrated multi-domain SPICE model of an FE–DE stack is used to accurately simulate the PUND and staircase voltage hopping methods.
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22 March 2021
Research Article|
March 22 2021
Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state
Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Nujhat Tasneem
;
Nujhat Tasneem
a)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
a)Author to whom correspondence should be addressed: ntasneem3@gatech.edu
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Prasanna Venkatesan Ravindran
;
Prasanna Venkatesan Ravindran
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Zheng Wang
;
Zheng Wang
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Jorge Gomez;
Jorge Gomez
2
School of Electrical and Computer Engineering, University of Notre Dame, Notre Dame
, In 46556, USA
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Jae Hur
;
Jae Hur
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Shimeng Yu;
Shimeng Yu
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Suman Datta;
Suman Datta
2
School of Electrical and Computer Engineering, University of Notre Dame, Notre Dame
, In 46556, USA
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Asif Islam Khan
Asif Islam Khan
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
3
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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a)Author to whom correspondence should be addressed: ntasneem3@gatech.edu
Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.
Appl. Phys. Lett. 118, 122901 (2021)
Article history
Received:
October 31 2020
Accepted:
February 16 2021
Citation
Nujhat Tasneem, Prasanna Venkatesan Ravindran, Zheng Wang, Jorge Gomez, Jae Hur, Shimeng Yu, Suman Datta, Asif Islam Khan; Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state. Appl. Phys. Lett. 22 March 2021; 118 (12): 122901. https://doi.org/10.1063/5.0035880
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