Spintronics, that is, the utilization of electron spin to enrich the functionality of microelectronics, has led to the inception of numerous novel devices, particularly magnetic random-access memory (MRAM). Over the last decade, significant effort has been devoted to magnetization manipulation using spin-orbit torque (SOT), which shows great promise for ultrafast and energy-efficient MRAM. In this Perspective, we summarize the latest progress in the study of SOT and highlight some of the technical challenges facing the development of practical SOT devices. After introducing the basic concepts of SOT and its relevance for magnetization switching, we will focus on several methods to realize deterministic SOT switching in the absence of an external field, which is a requirement for practical SOT devices. Additionally, we summarize the materials used in SOT devices. The final section is devoted to the most important recent advances in the application of SOT devices, including SOT-MRAM, spin logic, spin Hall nano-oscillators, and neuromorphic devices.
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22 March 2021
Perspective|
March 24 2021
Spin-orbit torques: Materials, physics, and devices
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Spin-Orbit Torque (SOT): Materials, Physics, and Devices
Xiufeng Han
;
Xiufeng Han
a)
1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
3
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Xiao Wang
;
Xiao Wang
1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Caihua Wan
;
Caihua Wan
1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Guoqiang Yu
;
Guoqiang Yu
1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Xiaorong Lv
Xiaorong Lv
4
Efound Analytics Ltd.
, Beijing 100095, China
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Xiufeng Han
1,2,3,a)
Xiao Wang
1
Caihua Wan
1
Guoqiang Yu
1,3
Xiaorong Lv
4
1
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
3
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
4
Efound Analytics Ltd.
, Beijing 100095, China
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 118, 120502 (2021)
Article history
Received:
November 30 2020
Accepted:
February 06 2021
Connected Content
A correction has been published:
Erratum: “Spin–orbit torques: Materials, physics, and devices,” [Appl. Phys. Lett. 118, 120502 (2021)]
Citation
Xiufeng Han, Xiao Wang, Caihua Wan, Guoqiang Yu, Xiaorong Lv; Spin-orbit torques: Materials, physics, and devices. Appl. Phys. Lett. 22 March 2021; 118 (12): 120502. https://doi.org/10.1063/5.0039147
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