Oxidation of TiN is a diffusion-limited process due to the high stability of the TiN metallic state at the TiN/TiO2 junction. Hence, the TiN/TiO2/TiN device being the inability to form a suitable interfacial layer results in the exhibition of abrupt current (conductance) rise and fall during the set (potentiation) and reset (depression) processes, respectively. Interfacial engineering by depositing Ti film served as the oxygen gettering material on top of the TiO2 layer induces a spontaneous reaction to form a TiOx interfacial layer (due to the low Gibbs free energy of suboxide formation). Such an interface layer acts as an oxygen reservoir that promotes gradual oxidation and reduction during the set and reset processes. Consequently, an excellent analog behavior having a 2-bit per cell and robust epoch training can be achieved. However, a thick interfacial layer may degrade the switching behavior of the device due to the high internal resistance. This work suggests that interfacial engineering could be considered in designing high-performance analog memristor devices.
Skip Nav Destination
Article navigation
17 August 2020
Research Article|
August 19 2020
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Lung-Yu Chang
;
Lung-Yu Chang
1
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
Search for other works by this author on:
Firman Mangasa Simanjuntak
;
Firman Mangasa Simanjuntak
a)
1
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
2
Centre for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton
, Southampton SO17 1BJ, United Kingdom
a)Authors to whom correspondence should be addressed: f.m.simanjuntak@soton.ac.uk and tseng@cc.nctu.edu.tw
Search for other works by this author on:
Chun-Ling Hsu
;
Chun-Ling Hsu
1
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
Search for other works by this author on:
Sridhar Chandrasekaran
;
Sridhar Chandrasekaran
3
Department of Electrical Engineering and Computer Sciences, National Chiao Tung University
, Hsinchu 30010, Taiwan
Search for other works by this author on:
Tseung-Yuen Tseng
Tseung-Yuen Tseng
a)
1
Institute of Electronics, National Chiao Tung University
, Hsinchu 30010, Taiwan
a)Authors to whom correspondence should be addressed: f.m.simanjuntak@soton.ac.uk and tseng@cc.nctu.edu.tw
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: f.m.simanjuntak@soton.ac.uk and tseng@cc.nctu.edu.tw
Appl. Phys. Lett. 117, 073504 (2020)
Article history
Received:
May 21 2020
Accepted:
August 07 2020
Citation
Lung-Yu Chang, Firman Mangasa Simanjuntak, Chun-Ling Hsu, Sridhar Chandrasekaran, Tseung-Yuen Tseng; Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices. Appl. Phys. Lett. 17 August 2020; 117 (7): 073504. https://doi.org/10.1063/5.0014829
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.