A synthetic antiferromagnetic (SAF) layer is a key component in spin-transfer torque magneto-resistive random-access memory devices. This study reveals that slight fluctuations in SAF coupling at the margin of the reference layer and hard layer (i.e., concurrent reversal) can lead to write errors in the form of back-hopping (BH). It appears that variable BH behavior can be attributed to competition between antiparallel (AP) → parallel (P) and P → AP transitions associated with SAF coupling. Our conclusions are supported by careful analysis of switching phase diagrams and measurements of self-heating and voltage-controlled magnetic anisotropy. We also observed that one form of coupling provided higher perpendicular magnetic anisotropic energy and thermal stability, which is likely due to the Dzyaloshinskii–Moriya interaction (DMI) effect. Thus, minimizing variations in DMI by optimizing SAF coupling is crucial for minimizing write error rates.
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17 August 2020
Research Article|
August 20 2020
Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices
Kuan-Ming Chen;
Kuan-Ming Chen
1
Department of Materials Science and Engineering, National Chiao Tung University
, Hsinchu 30010, Taiwan
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Chih-Wei Cheng
;
Chih-Wei Cheng
1
Department of Materials Science and Engineering, National Chiao Tung University
, Hsinchu 30010, Taiwan
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Jeng-Hua Wei;
Jeng-Hua Wei
2
Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute (ITRI)
, Hsinchu 31040, Taiwan
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Yu-Chen Hsin;
Yu-Chen Hsin
2
Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute (ITRI)
, Hsinchu 31040, Taiwan
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Yuan-Chieh Tseng
Yuan-Chieh Tseng
a)
1
Department of Materials Science and Engineering, National Chiao Tung University
, Hsinchu 30010, Taiwan
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 117, 072405 (2020)
Article history
Received:
April 24 2020
Accepted:
August 07 2020
Citation
Kuan-Ming Chen, Chih-Wei Cheng, Jeng-Hua Wei, Yu-Chen Hsin, Yuan-Chieh Tseng; Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices. Appl. Phys. Lett. 17 August 2020; 117 (7): 072405. https://doi.org/10.1063/5.0011786
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