We report the fabrication of large-area highly aligned films of a naphthalene dicarboximide-based copolymer P(NDI2OD-T2) via solvent vapor annealing of as-spun films under a high magnetic field. Structural characterization reveals that the incorporation of a small amount of graphene nanosheets via solution mixing remarkably improves the degree of chain alignment and ordering of the semiconducting polymers. Field-effect transistors based on the magnetically aligned polymer/graphene composites exhibit a dramatic enhancement of electron mobility as well as extraordinarily high mobility anisotropy of 81, compared to pristine P(NDI2OD-T2)-based devices. We further proposed a mechanism to explain the enhancement of molecular orientation and charge transport, which is based on the assembling of polymer aggregates on the π-plane of graphene to facilitate magnetic alignment.
Skip Nav Destination
Article navigation
10 August 2020
Research Article|
August 10 2020
Graphene assisting magnetic alignment of a high-performance semiconducting polymer for improved carrier transport
Songlin Su;
Songlin Su
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, Anhui, People's Republic of China
2
University of Science and Technology of China
, Hefei 230026, People's Republic of China
Search for other works by this author on:
Guoxing Pan;
Guoxing Pan
a)
3
Institutes of Physical Science and Information Technology, Anhui University
, Hefei 230601, People's Republic of China
a)Authors to whom correspondence should be addressed: pangrady@mail.ustc.edu.cn and fzhang@hmfl.ac.cn
Search for other works by this author on:
Xuhua Xiao;
Xuhua Xiao
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, Anhui, People's Republic of China
2
University of Science and Technology of China
, Hefei 230026, People's Republic of China
Search for other works by this author on:
Qi Wang;
Qi Wang
4
Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences
, Hefei 230031, People's Republic of China
5
Institute of Plasma Physics, Chinese Academy of Sciences
, Hefei 230031, People's Republic of China
Search for other works by this author on:
Fapei Zhang
Fapei Zhang
a)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei 230031, Anhui, People's Republic of China
4
Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences
, Hefei 230031, People's Republic of China
a)Authors to whom correspondence should be addressed: pangrady@mail.ustc.edu.cn and fzhang@hmfl.ac.cn
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: pangrady@mail.ustc.edu.cn and fzhang@hmfl.ac.cn
Appl. Phys. Lett. 117, 063301 (2020)
Article history
Received:
February 29 2020
Accepted:
July 27 2020
Citation
Songlin Su, Guoxing Pan, Xuhua Xiao, Qi Wang, Fapei Zhang; Graphene assisting magnetic alignment of a high-performance semiconducting polymer for improved carrier transport. Appl. Phys. Lett. 10 August 2020; 117 (6): 063301. https://doi.org/10.1063/5.0006234
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram
Related Content
Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer
Appl. Phys. Lett. (April 2015)
Energy level pinning of an n-type semiconducting polymer on conductive polymer electrodes: Effects of work function and annealing
J. Appl. Phys. (August 2012)
Time-of-flight measurements and vertical transport in a high electron-mobility polymer
Appl. Phys. Lett. (November 2011)
Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors
Appl. Phys. Lett. (August 2012)
The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors
Appl. Phys. Lett. (January 2012)