In this study, we report a power factor (PF) value as high as 1950 μW m−1 K−2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.
References
1.
M. S.
Dresselhaus
, G.
Chen
, M. Y.
Tang
, R. G.
Yang
, H.
Lee
, D. Z.
Wang
, Z. F.
Ren
, J.-P.
Fleurial
, and P.
Gogna
, Adv. Mater.
19
, 1043
(2007
).2.
T.
Fang
, X.
Li
, C.
Hu
, Q.
Zhang
, J.
Yang
, W.
Zhang
, X.
Zhao
, D. J.
Singh
, and T.
Zhu
, Adv. Funct. Mater.
29
, 1900677
(2019
).3.
A.
Gaul
, Q.
Peng
, D. J.
Singh
, T.
Borca-Tasciuc
, and G.
Ramanath
, J. Appl. Phys.
125
, 165101
(2019
).4.
C.
Kim
, D. H.
Lopez
, D. H.
Kim
, and H.
Kim
, J. Mater. Chem. A
7
, 791
(2019
).5.
J.
Zhang
, H. J.
Liu
, L.
Cheng
, J.
Wei
, J.
Shi
, X. F.
Tang
, and C.
Uher
, J. Appl. Phys.
116
, 023706
(2014
).6.
S.
Choi
, K.
Kurosaki
, G.
Li
, Y.
Ohishi
, H.
Muta
, S.
Yamanaka
, and S.
Maeshima
, AIP Adv.
6
, 125015
(2016
).7.
Y.
Yu
, B.
Duan
, G.
Bai
, J.
Li
, L.
E
, F.
Li
, G.
Chen
, and P.
Zhai
, AIP Adv.
8
, 085201
(2018
).8.
M. V.
Daniel
, M.
Lindorf
, and M.
Albrecht
, J. Appl. Phys.
120
, 125306
(2016
).9.
Z.
Tu
, X.
Sun
, X.
Li
, R.
Li
, L.
Xi
, and J.
Yang
, AIP Adv.
9
, 045325
(2019
).10.
H.
Liu
, X.
Shi
, F.
Xu
, L.
Zhang
, W.
Zhang
, L.
Chen
, Q.
Li
, C.
Uher
, T.
Day
, and G. J.
Snyder
, Nat. Mater.
11
, 422
(2012
).11.
D.
Yang
, X.
Su
, Y.
Yan
, J.
He
, C.
Uher
, and X.
Tang
, APL Mater.
4
, 116110
(2016
).12.
W.
Liu
, L.
Yang
, Z.
Chen
, and J.
Zou
, Adv. Mater.
32
, 1905703
(2020
).13.
A. V.
Powell
, J. Appl. Phys.
126
, 100901
(2019
).14.
Z. U.
Khan
, O.
Bubnova
, M. J.
Jafari
, R.
Brooke
, X.
Liu
, R.
Gabrielsson
, T.
Ederth
, D. R.
Evans
, J. W.
Andreasen
, M.
Fahlman
, and X.
Crispin
, J. Mater. Chem. C
3
, 10616
(2015
).15.
C.
Yi
, A.
Wilhite
, L.
Zhang
, R.
Hu
, S. S. C.
Chuang
, J.
Zheng
, and X.
Gong
, ACS Appl. Mater. Interfaces
7
, 8984
(2015
).16.
Y.
Zheng
, H.
Zeng
, Q.
Zhu
, and J.
Xu
, J. Mater. Chem. C
6
, 8858
(2018
).17.
Y.
Du
, S. Z.
Shen
, K.
Cai
, and P. S.
Casey
, Prog. Polym. Sci.
37
, 820
(2012
).18.
J.
Yang
and T.
Caillat
, MRS Bull.
31
, 224
(2006
).19.
Y.
Peng
, L.
Miao
, J.
Gao
, C.
Liu
, M.
Kurosawa
, O.
Nakatsuka
, and S.
Zaima
, Sci. Rep.
9
, 14342
(2019
).20.
J. B.
Renucci
, M. A.
Renucci
, and M.
Cardona
, Solid State Commun.
9
, 1651
(1971
).21.
W. J.
Brya
, Solid State Commun.
12
, 253
(1973
).22.
T.
Tsukamoto
, N.
Hirose
, A.
Kasamatsu
, T.
Mimura
, T.
Matsui
, and Y.
Suda
, J. Mater. Sci.
50
, 4366
(2015
).23.
J.
Tolle
, A. V. G.
Chizmeshya
, Y.-Y.
Fang
, J.
Kouvetakis
, V. R.
D'Costa
, C.-W.
Hu
, J.
Menéndez
, and I. S. T.
Tsong
, Appl. Phys. Lett.
89
, 231924
(2006
).24.
M.
Kurosawa
, M.
Kato
, T.
Yamaha
, N.
Taoka
, O.
Nakatsuka
, and S.
Zaima
, in 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
(IEEE
, Singapore, Singapore
, 2014
), pp. 83
–84
.25.
M.
Kurosawa
, M.
Kato
, T.
Yamaha
, N.
Taoka
, O.
Nakatsuka
, and S.
Zaima
, Appl. Phys. Lett.
106
, 171908
(2015
).26.
V. R.
D'Costa
, J.
Tolle
, C. D.
Poweleit
, J.
Kouvetakis
, and J.
Menéndez
, Phys. Rev. B
76
, 035211
(2007
).27.
T.
Motooka
and O. W.
Holland
, Appl. Phys. Lett.
58
, 2360
(1991
).28.
J.
Liu
, Z.
Li
, K.
Zhu
, M.
He
, M.
Cong
, S.
Zhang
, J.
Peng
, and Y.
Liu
, Appl. Surf. Sci.
259
, 393
(2012
).29.
A.
Monshi
, M. R.
Foroughi
, and M. R.
Monshi
, World J. Nano Sci. Eng.
02
, 154
(2012
).30.
R. M.
German
, in Liquid Phase Sintering
(Springer US
, Boston, MA
, 1985
), pp. 101
–126
.31.
T.
Motooka
and O. W.
Holland
, Appl. Phys. Lett.
61
, 3005
(1992
).32.
T.
Berry
, C.
Fu
, G.
Auffermann
, G. H.
Fecher
, W.
Schnelle
, F.
Serrano-Sanchez
, Y.
Yue
, H.
Liang
, and C.
Felser
, Chem. Mater.
29
, 7042
(2017
).33.
B.
Yu
, M.
Zebarjadi
, H.
Wang
, K.
Lukas
, H.
Wang
, D.
Wang
, C.
Opeil
, M.
Dresselhaus
, G.
Chen
, and Z.
Ren
, Nano Lett.
12
, 2077
(2012
).34.
M.
Zebarjadi
, G.
Joshi
, G.
Zhu
, B.
Yu
, A.
Minnich
, Y.
Lan
, X.
Wang
, M.
Dresselhaus
, Z.
Ren
, and G.
Chen
, Nano Lett.
11
, 2225
(2011
).35.
N.
Neophytou
, X.
Zianni
, H.
Kosina
, S.
Frabboni
, B.
Lorenzi
, and D.
Narducci
, Nanotechnology
24
, 205402
(2013
).36.
B.
Stöckhert
and J.
Duyster
, J. Struct. Geol.
21
, 1477
(1999
).37.
C. M.
Bhandari
and D. M.
Rowe
, Section D Thermoelectric Materials
(CRC Press
, Boca Raton, FL
, 1995
), Vol. 49
, pp. 329
–339
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