In this study, we report a power factor (PF) value as high as 1950 μW m−1 K−2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.
Skip Nav Destination
,
,
,
,
,
,
,
,
,
Article navigation
3 August 2020
Research Article|
August 07 2020
Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping
Ying Peng
;
Ying Peng
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
2
Research Center for Smart Energy Technology, Toyota Technological Institute
, Nagoya 468-8511, Japan
Search for other works by this author on:
Huajun Lai;
Huajun Lai
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
Search for other works by this author on:
Chengyan Liu
;
Chengyan Liu
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
Search for other works by this author on:
Jie Gao
;
Jie Gao
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
Search for other works by this author on:
Masashi Kurosawa
;
Masashi Kurosawa
3
Department of Materials Physics, Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
4
PRESTO, Japan Science and Technology Agency
, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012, Japan
Search for other works by this author on:
Osamu Nakatsuka
;
Osamu Nakatsuka
3
Department of Materials Physics, Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
5
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya 464-8601, Japan
Search for other works by this author on:
Tsunehiro Takeuchi;
Tsunehiro Takeuchi
2
Research Center for Smart Energy Technology, Toyota Technological Institute
, Nagoya 468-8511, Japan
6
Institute of Materials Innovation, Nagoya University
, Nagoya 464-8603, Japan
Search for other works by this author on:
Shigeaki Zaima;
Shigeaki Zaima
7
Division of Materials Science and Engineering, Graduate School of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
Search for other works by this author on:
Sakae Tanemura
;
Sakae Tanemura
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
8
Japan Fine Ceramics Center
, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Search for other works by this author on:
Lei Miao
Lei Miao
a)
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
9
Department of Materials Science and Engineering, Faculty of Engineering, Shibaura Institute of Technology
, Tokyo 135-8548, Japan
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Ying Peng
1,2
Huajun Lai
1
Chengyan Liu
1
Jie Gao
1
Masashi Kurosawa
3,4
Osamu Nakatsuka
3,5
Tsunehiro Takeuchi
2,6
Shigeaki Zaima
7
Sakae Tanemura
1,8
Lei Miao
1,9,a)
1
Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology
, Guilin 541004, China
2
Research Center for Smart Energy Technology, Toyota Technological Institute
, Nagoya 468-8511, Japan
3
Department of Materials Physics, Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
4
PRESTO, Japan Science and Technology Agency
, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012, Japan
5
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya 464-8601, Japan
6
Institute of Materials Innovation, Nagoya University
, Nagoya 464-8603, Japan
7
Division of Materials Science and Engineering, Graduate School of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
8
Japan Fine Ceramics Center
, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
9
Department of Materials Science and Engineering, Faculty of Engineering, Shibaura Institute of Technology
, Tokyo 135-8548, Japan
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 117, 053903 (2020)
Article history
Received:
April 28 2020
Accepted:
July 27 2020
Citation
Ying Peng, Huajun Lai, Chengyan Liu, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Shigeaki Zaima, Sakae Tanemura, Lei Miao; Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping. Appl. Phys. Lett. 3 August 2020; 117 (5): 053903. https://doi.org/10.1063/5.0012087
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Related Content
Reinforcement of power factor in N-type multiphase thin film of Si1−x−yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity
Appl. Phys. Lett. (September 2021)
Exceptional thermoelectric power factors in hyperdoped, fully dehydrogenated nanocrystalline silicon thin films
Appl. Phys. Lett. (December 2021)
Suppression of tin precipitation in SiSn alloy layers by implanted carbon
Appl. Phys. Lett. (June 2014)
Electronegativity and doping in semiconductors
J. Appl. Phys. (August 2012)
A simple green route to blue thermoelectric PEDOT: PSS
Appl. Phys. Lett. (December 2021)