α-Ga2O3 is a metastable phase of gallium oxide (Ga2O3) and is important for application in solar-blind region optoelectronic devices. High-quality α-Ga2O3 thin films can be grown by mist chemical vapor deposition (mist-CVD). We systematically investigate the growth mechanism of α-Ga2O3 by mist-CVD using acetylacetonated Ga source solutions. We propose a growth mechanism of α-Ga2O3 in mist-CVD in which acetylacetonate ligands anchor to surface hydroxyls and Ga–O bonds are formed by a ligand exchange mechanism. The origin of oxygen atoms and impurity concentration profiles in grown α-Ga2O3 thin films are examined by secondary ion mass spectroscopy.
References
1.
S. J.
Pearton
, J.
Yang
, P. H.
Cary
, F.
Ren
, J.
Kim
, M. J.
Tadjer
, and M. A.
Mastro
, Appl. Phys. Rev.
5
, 011301
(2018
).2.
E.
Ahmadi
and Y.
Oshima
, J. Appl. Phys.
126
, 160901
(2019
).3.
M.
Higashiwaki
, K.
Sasaki
, A.
Kuramata
, T.
Masui
, and S.
Yamakoshi
, Appl. Phys. Lett.
100
, 013504
(2012
).4.
T.
Oshima
, T.
Okuno
, N.
Arai
, N.
Suzuki
, S.
Ohira
, and S.
Fujita
, Appl. Phys. Express
1
, 011202
(2008
).5.
H. Y.
Playford
, A. C.
Hannon
, E. R.
Barney
, and R. I.
Walton
, Chem. Eur. J.
19
, 2803
(2013
).6.
A.
Segura
, L.
Artś
, R.
Cuscó
, R.
Goldhahn
, and M.
Feneberg
, Phys. Rev. Mater.
1
, 024604
(2017
).7.
S.
Fujita
, M.
Oda
, K.
Kaneko
, and T.
Hitora
, Jpn. J. Appl. Phys., Part 1
55
, 1202A3
(2016
).8.
H.
Ito
, K.
Kaneko
, and S.
Fujita
, Jpn. J. Appl. Phys., Part 2
51
, 09LD16
(2012
).9.
R.
Jinno
, T.
Uchida
, K.
Kaneko
, and S.
Fujita
, Appl. Phys. Express
9
, 071101
(2016
).10.
D.
Shinohara
and S.
Fujita
, Jpn. J. Appl. Phys., Part 1
47
, 7311
(2008
).11.
K.
Kaneko
, H.
Kawanowa
, H.
Ito
, and S.
Fujita
, Jpn. J. Appl. Phys., Part 1
51
, 11PJ03
(2012
).12.
B. C.
Bunker
and W. H.
Casey
, The Aqueous Chemistry of Oxides
(Oxford University Press
, 2016
).13.
R. J.
Lang
, J. Acoust. Soc. Am.
34
, 6
(1962
).14.
K.
Uno
, Y.
Yamasaki
, and I.
Tanaka
, Appl. Phys. Express
10
, 015502
(2017
).15.
I.
Cora
, F.
Mezzadri
, F.
Boschi
, M.
Bosi
, M.
Caplovicová
, G.
Calestani
, I.
Dódony
, B.
Pécz
, and R.
Fornari
, CrystEngComm
19
, 1509
(2017
).16.
S.
Yoshioka
, H.
Hayashi
, A.
Kuwabara
, F.
Oba
, K.
Matsunaga
, and I.
Tanaka
, J. Phys.: Condens. Matter
19
, 346211
(2007
).17.
J.
Haladjian
, P.
Bianco
, and R.
Pilard
, J. Chim. Phys.
71
, 1251
(1974
);J.
Haladjian
, P.
Bianco
, and R.
Pilard
, Critical Stability Constants
, edited by A.
Martell
and R. M.
Smith
(Springer
, 1977
), Vol. 3
.18.
O. B.
Ajayi
, B. S.
Akanni
, J. N.
Lambi
, H. D.
Burrows
, O.
Osasona
, and B.
Podor
, Thin Solid Films
138
, 91
(1986
).19.
J. S.
Kim
, H. A.
Marzouk
, P. J.
Reucroft
, J. D.
Robertson
, and C. E.
Hamrin
, Jr., Thin Solid Films
230
, 156
(1993
).20.
M.
Baltes
, O.
Collart
, P.
van der Voort
, and E. F.
Vansant
, Langmuir
15
, 5841
(1999
).21.
D.
Tamba
, O.
Kubo
, M.
Oda
, S.
Osaka
, K.
Takahashi
, H.
Tabata
, K.
Kaneko
, S.
Fujita
, and M.
Katayama
, Appl. Phys. Lett.
108
, 251602
(2016
).22.
H.
Craig
, Science
133
, 1702
(1961
).23.
K.
Akaiwa
and S.
Fujita
, Jpn. J. Appl. Phys., Part 1
51
, 070203
(2012
).24.
T.
Kawaharamura
, K.
Mori
, H.
Orita
, T.
Shirahata
, S.
Fujita
, and T.
Hirao
, Jpn. J. Appl. Phys., Part 1
52
, 035501
(2013
).25.
K.
Kaneko
, K.
Tsumura
, K.
Ishii
, T.
Onuma
, T.
Honda
, and S.
Fujita
, J. Electron. Mater.
47
, 4356
(2018
).© 2020 Author(s).
2020
Author(s)
You do not currently have access to this content.
