We investigated lateral nanowires at the topmost layer of SrVO3 (001) ultrathin films using in situ low-temperature scanning tunneling microscopy and spectroscopy. The nanowires were spontaneously formed in the topmost layer of SrVO3 with a (√2 × √2)-R45° reconstruction on the terrace of a (√5 × √5)-R26.6° reconstruction. The electronic states of nanowires were significantly influenced by the nanowire width. With reducing the nanowire width from 5.5 nm to 1.7 nm, the zero-bias conductance of nanowires steeply decreased toward zero, exhibiting a metal–insulator transition possibly driven by dimensional crossover, previously observed in thickness-reduced SrVO3 ultrathin films.
Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film
Hirofumi Oka, Yoshinori Okada, Kenichi Kaminaga, Daichi Oka, Taro Hitosugi, Tomoteru Fukumura; Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film. Appl. Phys. Lett. 3 August 2020; 117 (5): 051603. https://doi.org/10.1063/5.0018240
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