Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.
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Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
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20 July 2020
Research Article|
July 20 2020
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
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S. A. Church
;
S. A. Church
a)
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
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B. Ding
;
B. Ding
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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P. W. Mitchell
;
P. W. Mitchell
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
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M. J. Kappers;
M. J. Kappers
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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M. Frentrup;
M. Frentrup
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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G. Kusch
;
G. Kusch
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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S. M. Fairclough
;
S. M. Fairclough
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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D. J. Wallis;
D. J. Wallis
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
3
Centre for High Frequency Engineering, University of Cardiff
, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom
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R. A. Oliver
;
R. A. Oliver
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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D. J. Binks
D. J. Binks
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
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S. A. Church
1,a)
B. Ding
2
P. W. Mitchell
1
M. J. Kappers
2
M. Frentrup
2
G. Kusch
2
S. M. Fairclough
2
D. J. Wallis
2,3
R. A. Oliver
2
D. J. Binks
1
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
3
Centre for High Frequency Engineering, University of Cardiff
, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 117, 032103 (2020)
Article history
Received:
April 28 2020
Accepted:
July 06 2020
Citation
S. A. Church, B. Ding, P. W. Mitchell, M. J. Kappers, M. Frentrup, G. Kusch, S. M. Fairclough, D. J. Wallis, R. A. Oliver, D. J. Binks; Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells. Appl. Phys. Lett. 20 July 2020; 117 (3): 032103. https://doi.org/10.1063/5.0012131
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