We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The device operates at ∼255 nm with a maximum external quantum efficiency of 7.2% and wall-plug of 4%, which are nearly one to two orders of magnitude higher than those of previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission, with a nearly constant emission peak with increasing current, due to the strong charge carrier confinement related to the presence of Ga-rich nanoclusters. Efficiency droop, however, is observed at relatively low current densities. Detailed temperature-dependent measurements suggest that the presence of efficiency droop of deep UV LEDs is largely due to electron overflow.
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14 December 2020
Research Article|
December 14 2020
An AlGaN tunnel junction light emitting diode operating at 255 nm
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A. Pandey
;
A. Pandey
1
Department of Electrical Engineering and Computer Science, University of Michigan
, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA
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J. Gim
;
J. Gim
2
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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R. Hovden;
R. Hovden
2
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Z. Mi
Z. Mi
a)
1
Department of Electrical Engineering and Computer Science, University of Michigan
, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA
a)Author to whom correspondence should be addressed: [email protected]. Tel.: (734) 764–3963
Search for other works by this author on:
A. Pandey
1
R. Hovden
2
Z. Mi
1,a)
1
Department of Electrical Engineering and Computer Science, University of Michigan
, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA
2
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
a)Author to whom correspondence should be addressed: [email protected]. Tel.: (734) 764–3963
Appl. Phys. Lett. 117, 241101 (2020)
Article history
Received:
November 03 2020
Accepted:
November 27 2020
Citation
A. Pandey, J. Gim, R. Hovden, Z. Mi; An AlGaN tunnel junction light emitting diode operating at 255 nm. Appl. Phys. Lett. 14 December 2020; 117 (24): 241101. https://doi.org/10.1063/5.0036286
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