The mobility-lifetime (μτ) product is an important parameter that determines the performance of electronic and photonic devices. To overcome the previously reported difficulties in measuring the μτ product at cryogenic temperatures, we implement a time-resolved cyclotron resonance method to determine the carrier lifetime τ. After clarifying the difference between the AC and DC mobilities measured by cyclotron resonance and time-of-flight methods, respectively, we demonstrate an inverse temperature dependence of the μτ product. The highest recorded μτ product of 0.2 cm2/V, which is approximately 100 times the room-temperature value, was obtained at 2 K for chemical-vapor-deposition diamond of the highest currently available purity.

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