We investigate spin-wave resonance in nanoscale CoFeB/MgO magnetic tunnel junctions (MTJs) with a perpendicular easy axis and various free-layer sizes. Two types of MTJs are fabricated by different process conditions, and the spin-wave resonance is measured with homodyne-detected ferromagnetic resonance. We focus on the distance between resonance frequencies of the uniform and spin-wave modes as a function of the free-layer size in order to examine the effect of the edge state of MTJs. A marked difference is observed between the two types of MTJs, and the result is consistently reproduced by a model assuming free- or fixed-edge boundary conditions with or without reduced magnetic properties near the pattern edge for each MTJ. The obtained results indicate that the edge state of nanoscale MTJs is crucially affected by the process condition, and spin-wave resonance can serve as a sensitive probe for the edge condition.
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16 November 2020
Research Article|
November 17 2020
Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance
M. Shinozaki
;
M. Shinozaki
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
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T. Dohi
;
T. Dohi
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
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J. Igarashi
;
J. Igarashi
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
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J. Llandro
;
J. Llandro
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Center for Spintronics Research Network, Tohoku University
, Sendai 980-8577, Japan
3
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
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S. Fukami
;
S. Fukami
a)
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Center for Spintronics Research Network, Tohoku University
, Sendai 980-8577, Japan
3
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
4
Center for Innovative Integrated Electronic Systems, Tohoku University
, Sendai 980-0845, Japan
5
WPI-Advanced Institute for Materials Research, Tohoku University
, Sendai 980-8577, Japan
a)Author to whom correspondence should to addressed: [email protected]
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H. Sato
;
H. Sato
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Center for Spintronics Research Network, Tohoku University
, Sendai 980-8577, Japan
3
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
4
Center for Innovative Integrated Electronic Systems, Tohoku University
, Sendai 980-0845, Japan
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H. Ohno
H. Ohno
1
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
, Sendai 980-8577, Japan
2
Center for Spintronics Research Network, Tohoku University
, Sendai 980-8577, Japan
3
Center for Science and Innovation in Spintronics, Tohoku University
, Sendai 980-8577, Japan
4
Center for Innovative Integrated Electronic Systems, Tohoku University
, Sendai 980-0845, Japan
5
WPI-Advanced Institute for Materials Research, Tohoku University
, Sendai 980-8577, Japan
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a)Author to whom correspondence should to addressed: [email protected]
Appl. Phys. Lett. 117, 202404 (2020)
Article history
Received:
July 01 2020
Accepted:
October 17 2020
Citation
M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, H. Ohno; Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance. Appl. Phys. Lett. 16 November 2020; 117 (20): 202404. https://doi.org/10.1063/5.0020591
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