To cool a high mobility two-dimensional electron gas (2DEG) at a GaAs–AlGaAs heterojunction to milliKelvin temperatures, we have fabricated low resistance Ohmic contacts based on alloys of Au, Ni, and Ge. The Ohmic contacts have a typical contact resistance of at 4.2 K, which drops to below 0.9 K. Scanning electron microscope images establish that the contacts have the same inhomogeneous microstructure that has been observed in previous studies. Measurements of the contact resistance , the four-terminal resistance along the top of a single contact, and the vertical resistance RV all show that there is a superconductor in the Ohmic contact, which can be turned completely normal with a magnetic field of 0.15 T. We briefly discuss how this superconductivity may be affecting the electrical transport measurements of 2DEGs, especially how it may hinder the cooling of electrons in a 2DEG below 0.1 K.
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19 October 2020
Research Article|
October 19 2020
Superconductivity in AuNiGe Ohmic contacts to a GaAs-based high mobility two-dimensional electron gas Available to Purchase
C. B. Beauchamp
;
C. B. Beauchamp
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
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S. Dimitriadis
;
S. Dimitriadis
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
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J. T. Nicholls
;
J. T. Nicholls
a)
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
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L. V. Levitin
;
L. V. Levitin
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
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A. J. Casey;
A. J. Casey
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
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P. See;
P. See
2
National Physical Laboratory
, Hampton Road, Teddington, Middlesex, TW11 0LW, United Kingdom
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G. Creeth;
G. Creeth
3
London Centre for Nanotechnology, University College London
, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
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J. Waldie
;
J. Waldie
4
Cavendish Laboratory, University of Cambridge
, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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I. Farrer
;
I. Farrer
4
Cavendish Laboratory, University of Cambridge
, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
5
Department of Electronic and Electrical Engineering, University of Sheffield
, Mappin Street, Sheffield S1 3JD, United Kingdom
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H. E. Beere;
H. E. Beere
4
Cavendish Laboratory, University of Cambridge
, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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D. A. Ritchie
D. A. Ritchie
4
Cavendish Laboratory, University of Cambridge
, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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C. B. Beauchamp
1
S. Dimitriadis
1
J. T. Nicholls
1,a)
L. V. Levitin
1
A. J. Casey
1
P. See
2
G. Creeth
3
J. Waldie
4
I. Farrer
4,5
H. E. Beere
4
D. A. Ritchie
4
1
Department of Physics, Royal Holloway, University of London
, Egham TW20 0EX, United Kingdom
2
National Physical Laboratory
, Hampton Road, Teddington, Middlesex, TW11 0LW, United Kingdom
3
London Centre for Nanotechnology, University College London
, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
4
Cavendish Laboratory, University of Cambridge
, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
5
Department of Electronic and Electrical Engineering, University of Sheffield
, Mappin Street, Sheffield S1 3JD, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 117, 162104 (2020)
Article history
Received:
September 03 2020
Accepted:
October 07 2020
Citation
C. B. Beauchamp, S. Dimitriadis, J. T. Nicholls, L. V. Levitin, A. J. Casey, P. See, G. Creeth, J. Waldie, I. Farrer, H. E. Beere, D. A. Ritchie; Superconductivity in AuNiGe Ohmic contacts to a GaAs-based high mobility two-dimensional electron gas. Appl. Phys. Lett. 19 October 2020; 117 (16): 162104. https://doi.org/10.1063/5.0028217
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