We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the to transition in Yb+. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with a 0.99 temporal overlap to the Yb+ emission and partially shift the emission of the defect toward the Yb+ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of s−1 and an entanglement fidelity of 94% can be attained using a weak excitation scheme with reasonable parameters.
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12 October 2020
Research Article|
October 13 2020
Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
Special Collection:
Hybrid Quantum Devices
Jennifer F. Lilieholm
;
Jennifer F. Lilieholm
a)
1
Department of Physics, University of Washington
, Seattle, Washington 98195, USA
a)Author to whom correspondence should be addressed: [email protected]
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Vasileios Niaouris
;
Vasileios Niaouris
1
Department of Physics, University of Washington
, Seattle, Washington 98195, USA
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Alexander Kato
;
Alexander Kato
1
Department of Physics, University of Washington
, Seattle, Washington 98195, USA
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Kai-Mei C. Fu
;
Kai-Mei C. Fu
1
Department of Physics, University of Washington
, Seattle, Washington 98195, USA
2
Department of Electrical and Computer Engineering, University of Washington
, Seattle, Washington 98195, USA
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Boris B. Blinov
Boris B. Blinov
1
Department of Physics, University of Washington
, Seattle, Washington 98195, USA
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a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Issue on Hybrid Quantum Devices.
Appl. Phys. Lett. 117, 154002 (2020)
Article history
Received:
June 26 2020
Accepted:
October 02 2020
Citation
Jennifer F. Lilieholm, Vasileios Niaouris, Alexander Kato, Kai-Mei C. Fu, Boris B. Blinov; Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion. Appl. Phys. Lett. 12 October 2020; 117 (15): 154002. https://doi.org/10.1063/5.0019892
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